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FQU6N25-VB Product details
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FQU6N25-VB MOSFET Product Introduction
FQU6N25-VB is a high-performance N-channel power MOSFET in TO251 package. The MOSFET has a drain-source voltage (VDS) tolerance of 250V, supports a gate-source voltage (VGS) of ±20V, and a turn-on voltage (Vth) of 3V. Its on-resistance (RDS(ON)@VGS=10V) is 1100mΩ and the maximum drain current (ID) is 3.8A. FQU6N25-VB uses Trench technology and is designed for medium-to-high voltage and medium-current applications, providing excellent electrical performance and stability.
FQU6N25-VB is a high-performance N-channel power MOSFET in TO251 package. The MOSFET has a drain-source voltage (VDS) tolerance of 250V, supports a gate-source voltage (VGS) of ±20V, and a turn-on voltage (Vth) of 3V. Its on-resistance (RDS(ON)@VGS=10V) is 1100mΩ and the maximum drain current (ID) is 3.8A. FQU6N25-VB uses Trench technology and is designed for medium-to-high voltage and medium-current applications, providing excellent electrical performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3V | 3.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
FQU6N25-VB MOSFET Detailed parameter description
1. **Package type**: TO251
- The TO251 package provides good heat dissipation and compact size for this MOSFET, suitable for use in space-limited applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of switching and power control applications, with good conductivity and switching characteristics.
3. **Drain-source voltage (VDS)**: 250V
- The maximum drain-source voltage is 250V, suitable for stable operation in medium and high voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate voltage of ±20V, providing a flexible control range and high voltage tolerance.
5. **Turning point voltage (Vth)**: 3V
- The turning point voltage is 3V, which means that the MOSFET starts to conduct at this voltage, which is suitable for various control circuit requirements.
6. **On-resistance (RDS(ON)@VGS=10V)**: 1100mΩ
- When the gate voltage is 10V, the on-resistance is 1100mΩ, providing medium conductivity and suitable for medium current applications.
7. **Drain current (ID)**: 3.8A
- The maximum drain current is 3.8A, which is suitable for applications handling medium current.
8. **Technology type**: Trench
- Trench technology provides lower on-resistance and efficient switching performance, suitable for power electronics applications.
1. **Package type**: TO251
- The TO251 package provides good heat dissipation and compact size for this MOSFET, suitable for use in space-limited applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of switching and power control applications, with good conductivity and switching characteristics.
3. **Drain-source voltage (VDS)**: 250V
- The maximum drain-source voltage is 250V, suitable for stable operation in medium and high voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate voltage of ±20V, providing a flexible control range and high voltage tolerance.
5. **Turning point voltage (Vth)**: 3V
- The turning point voltage is 3V, which means that the MOSFET starts to conduct at this voltage, which is suitable for various control circuit requirements.
6. **On-resistance (RDS(ON)@VGS=10V)**: 1100mΩ
- When the gate voltage is 10V, the on-resistance is 1100mΩ, providing medium conductivity and suitable for medium current applications.
7. **Drain current (ID)**: 3.8A
- The maximum drain current is 3.8A, which is suitable for applications handling medium current.
8. **Technology type**: Trench
- Trench technology provides lower on-resistance and efficient switching performance, suitable for power electronics applications.
Domain and module applications：
FQU6N25-VB MOSFET Application Fields and Module Examples
The medium-to-high voltage and medium current handling capabilities of the FQU6N25-VB MOSFET make it widely used in multiple fields and modules:
1. **Power Switch**:
- FQU6N25-VB can be used in power switching applications such as switch control in AC-DC power conversion. Its 250V withstand voltage capability enables it to operate stably in an environment with large power supply voltage fluctuations.
2. **Current Control Module**:
- In the current control module, this MOSFET is suitable for medium current switching applications such as motor drive and load switching, providing reliable current control and switching performance.
3. **Power Management System**:
- Suitable for power switch control in power management systems such as DC-DC converters and battery management systems, which can effectively handle the power requirements in power conversion and management.
4. **Industrial Automation**:
- In industrial automation systems, FQU6N25-VB can be used for medium power switch control, such as power switch and load control in industrial control equipment, and can provide stable switching performance.
5. **Household Appliances**:
- This MOSFET is suitable for switching applications in household appliances, such as rice cookers, electric fans, etc., and can play a role in power control and power regulation of these appliances.
These application examples show the flexibility of FQU6N25-VB MOSFET in medium and high voltage and medium current applications, especially suitable for various switching and power control modules.
The medium-to-high voltage and medium current handling capabilities of the FQU6N25-VB MOSFET make it widely used in multiple fields and modules:
1. **Power Switch**:
- FQU6N25-VB can be used in power switching applications such as switch control in AC-DC power conversion. Its 250V withstand voltage capability enables it to operate stably in an environment with large power supply voltage fluctuations.
2. **Current Control Module**:
- In the current control module, this MOSFET is suitable for medium current switching applications such as motor drive and load switching, providing reliable current control and switching performance.
3. **Power Management System**:
- Suitable for power switch control in power management systems such as DC-DC converters and battery management systems, which can effectively handle the power requirements in power conversion and management.
4. **Industrial Automation**:
- In industrial automation systems, FQU6N25-VB can be used for medium power switch control, such as power switch and load control in industrial control equipment, and can provide stable switching performance.
5. **Household Appliances**:
- This MOSFET is suitable for switching applications in household appliances, such as rice cookers, electric fans, etc., and can play a role in power control and power regulation of these appliances.
These application examples show the flexibility of FQU6N25-VB MOSFET in medium and high voltage and medium current applications, especially suitable for various switching and power control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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