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FQU5N50C-VB Product details
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1. FQU5N50C-VB Product Introduction
FQU5N50C-VB is a single-channel N-type power MOSFET in TO251 package, designed for high voltage applications. The device can withstand a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V. It uses SJ_Multi-EPI technology, has a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 950mΩ @ VGS = 10V, and supports a maximum drain current of 5A. These features make the FQU5N50C-VB perform well in high voltage switching applications, providing high voltage resistance and stable switching performance.
FQU5N50C-VB is a single-channel N-type power MOSFET in TO251 package, designed for high voltage applications. The device can withstand a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V. It uses SJ_Multi-EPI technology, has a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 950mΩ @ VGS = 10V, and supports a maximum drain current of 5A. These features make the FQU5N50C-VB perform well in high voltage switching applications, providing high voltage resistance and stable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description of FQU5N50C-VB
1. **Package type**: TO251
- Provides good heat dissipation performance and moderate package size, suitable for high voltage application requirements.
2. **Configuration**: Single-channel N-type MOSFET
- Single-channel design is suitable for various high voltage switching applications.
3. **Drain-source voltage (VDS)**: 650V
- Suitable for applications in high voltage environments, and can stably operate within a voltage range of 650V.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a wider gate drive voltage and improves switch control capabilities.
5. **Threshold voltage (Vth)**: 3.5V
- Provides a moderate gate turn-on voltage, making the device easy to drive.
6. **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- Low to medium on-resistance provides relatively low power loss and high efficiency.
7. **Drain current (ID)**: 5A
- Supports a maximum drain current of 5A, suitable for medium power switching applications.
8. **Technology**: SJ_Multi-EPI
- Using SJ_Multi-EPI technology, it provides high withstand voltage and high efficiency switching performance, suitable for high voltage switching applications.
1. **Package type**: TO251
- Provides good heat dissipation performance and moderate package size, suitable for high voltage application requirements.
2. **Configuration**: Single-channel N-type MOSFET
- Single-channel design is suitable for various high voltage switching applications.
3. **Drain-source voltage (VDS)**: 650V
- Suitable for applications in high voltage environments, and can stably operate within a voltage range of 650V.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a wider gate drive voltage and improves switch control capabilities.
5. **Threshold voltage (Vth)**: 3.5V
- Provides a moderate gate turn-on voltage, making the device easy to drive.
6. **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- Low to medium on-resistance provides relatively low power loss and high efficiency.
7. **Drain current (ID)**: 5A
- Supports a maximum drain current of 5A, suitable for medium power switching applications.
8. **Technology**: SJ_Multi-EPI
- Using SJ_Multi-EPI technology, it provides high withstand voltage and high efficiency switching performance, suitable for high voltage switching applications.
Domain and module applications：
3. FQU5N50C-VB Application Fields and Modules
1. **High Voltage Power Management**:
FQU5N50C-VB can be used in high voltage switch mode power supplies (SMPS) and other high voltage power management modules. Its high voltage withstand capability and stable switching performance make it suitable for high voltage applications in power conversion and control.
2. **Motor Drive System**:
In high voltage motor control systems, FQU5N50C-VB can stably drive medium power motors as a switching device. Its high withstand voltage characteristics ensure the reliable operation of motor drive systems under high voltage conditions.
3. **Industrial Power Switch**:
This MOSFET is suitable for high voltage industrial power switch applications such as inverters and other industrial power modules. Its high voltage and relatively low on-resistance make it perform well in these applications, providing reliable switching performance.
4. **Lighting control system**:
In high-voltage lighting systems, especially in applications such as gas discharge lamps, FQU5N50C-VB can be used as a switch controller. Its high voltage tolerance and stable performance make it suitable for lighting applications that require high voltage control, improving the reliability and efficiency of the system.
5. **Power converter**:
FQU5N50C-VB can be used in power converter circuits as a high-voltage switching device. Its high voltage and medium current capabilities make it suitable for power conversion applications that require high efficiency and high voltage resistance.
Due to its excellent high voltage tolerance and efficient switching performance, FQU5N50C-VB is widely used in high-voltage power management, motor drive, industrial power switch, lighting control and other fields, providing a stable and reliable solution.
1. **High Voltage Power Management**:
FQU5N50C-VB can be used in high voltage switch mode power supplies (SMPS) and other high voltage power management modules. Its high voltage withstand capability and stable switching performance make it suitable for high voltage applications in power conversion and control.
2. **Motor Drive System**:
In high voltage motor control systems, FQU5N50C-VB can stably drive medium power motors as a switching device. Its high withstand voltage characteristics ensure the reliable operation of motor drive systems under high voltage conditions.
3. **Industrial Power Switch**:
This MOSFET is suitable for high voltage industrial power switch applications such as inverters and other industrial power modules. Its high voltage and relatively low on-resistance make it perform well in these applications, providing reliable switching performance.
4. **Lighting control system**:
In high-voltage lighting systems, especially in applications such as gas discharge lamps, FQU5N50C-VB can be used as a switch controller. Its high voltage tolerance and stable performance make it suitable for lighting applications that require high voltage control, improving the reliability and efficiency of the system.
5. **Power converter**:
FQU5N50C-VB can be used in power converter circuits as a high-voltage switching device. Its high voltage and medium current capabilities make it suitable for power conversion applications that require high efficiency and high voltage resistance.
Due to its excellent high voltage tolerance and efficient switching performance, FQU5N50C-VB is widely used in high-voltage power management, motor drive, industrial power switch, lighting control and other fields, providing a stable and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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