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FQU4P25-VB Product details
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FQU4P25-VB MOSFET Product Introduction
FQU4P25-VB is a high voltage P-type MOSFET with TO251 package and Trench technology. This MOSFET is designed for applications that require high voltage load control. Its maximum drain-source voltage is -200V, enabling it to operate stably in high voltage environments. Its low on-resistance and high current carrying capacity make it excellent in high voltage power supply and power switching applications, and it is suitable for high voltage power supply switching and load control.
FQU4P25-VB is a high voltage P-type MOSFET with TO251 package and Trench technology. This MOSFET is designed for applications that require high voltage load control. Its maximum drain-source voltage is -200V, enabling it to operate stably in high voltage environments. Its low on-resistance and high current carrying capacity make it excellent in high voltage power supply and power switching applications, and it is suitable for high voltage power supply switching and load control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- 1200mΩ @ VGS = 4.5V
- **Drain current (ID)**: -5A
- **Technology type**: Trench
- **Package type**: TO251
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- 1200mΩ @ VGS = 4.5V
- **Drain current (ID)**: -5A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**: The FQU4P25-VB is ideally suited for use as a high-voltage power switch, capable of handling voltages up to -200V. In power management systems, especially where high-voltage load control is required, this MOSFET can effectively control power switches to ensure system stability and reliability.
2. **Power amplifier**: In power amplifier circuits, the FQU4P25-VB can be used as a high-voltage switching element, capable of handling the switching needs of high-voltage signals. Its high drain-source voltage and low on-resistance characteristics enable it to operate with high efficiency and reliability in power amplifiers.
3. **Inverter**: In inverter applications, this MOSFET can be used for high-voltage switching tasks to convert DC power to AC power. Its high voltage tolerance and low on-resistance enable it to operate stably in inverter circuits, providing reliable current control.
4. **Load Control**: In various load control applications, FQU4P25-VB can be used as a load switching element, especially in cases where high voltage load control is required. It is able to stably handle high voltage loads, ensuring effective control of the load and stability of the system.
5. **High Voltage Power Module**: FQU4P25-VB is suitable for use in high voltage power modules, especially in power modules that require high voltage switching. The high voltage capability and low on-resistance of this MOSFET enable it to effectively perform power switching control in high voltage power modules.
Through these application examples, FQU4P25-VB shows its importance in high voltage environments, and is particularly suitable for various electronic designs and systems that require high voltage switching and load control.
1. **High-voltage power switch**: The FQU4P25-VB is ideally suited for use as a high-voltage power switch, capable of handling voltages up to -200V. In power management systems, especially where high-voltage load control is required, this MOSFET can effectively control power switches to ensure system stability and reliability.
2. **Power amplifier**: In power amplifier circuits, the FQU4P25-VB can be used as a high-voltage switching element, capable of handling the switching needs of high-voltage signals. Its high drain-source voltage and low on-resistance characteristics enable it to operate with high efficiency and reliability in power amplifiers.
3. **Inverter**: In inverter applications, this MOSFET can be used for high-voltage switching tasks to convert DC power to AC power. Its high voltage tolerance and low on-resistance enable it to operate stably in inverter circuits, providing reliable current control.
4. **Load Control**: In various load control applications, FQU4P25-VB can be used as a load switching element, especially in cases where high voltage load control is required. It is able to stably handle high voltage loads, ensuring effective control of the load and stability of the system.
5. **High Voltage Power Module**: FQU4P25-VB is suitable for use in high voltage power modules, especially in power modules that require high voltage switching. The high voltage capability and low on-resistance of this MOSFET enable it to effectively perform power switching control in high voltage power modules.
Through these application examples, FQU4P25-VB shows its importance in high voltage environments, and is particularly suitable for various electronic designs and systems that require high voltage switching and load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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