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FQU3P20-VB Product details

Product introduction:

FQU3P20-VB Product Introduction

FQU3P20-VB is a P-channel power MOSFET in TO-251 package, designed for switching applications with high voltage loads. It has a drain-source withstand voltage of -200V and a drain current capability of -5A, suitable for high voltage and medium current environments. FQU3P20-VB uses Trench technology, which reduces the on-resistance by creating elongated trenches in the semiconductor, thereby improving switching efficiency and performance. The MOSFET has an on-resistance of 1000mΩ at VGS=10V, suitable for applications requiring high efficiency and low conduction losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-P -200V -2.5V -5A 1000mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-P -200V -2.5V -5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-P -200V -2.5V -5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-P
FQU3P20-VB Detailed parameter description

- **Package type**: TO-251
- **Polarity**: Single P-channel
- **Drain-source withstand voltage (VDS)**: -200V
- **Gate voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1200mΩ @ VGS=4.5V
- 1000mΩ @ VGS=10V
- **Drain current (ID)**: -5A
- **Technology**: Trench (trench technology)

Domain and module applications:

Application fields and module examples

The high withstand voltage and low on-resistance characteristics of FQU3P20-VB make it suitable for multiple fields and modules. The following are some typical application scenarios:

1. **Load switch**: In high voltage load switch applications, FQU3P20-VB can efficiently control the switching operation of the load. Its -200V withstand voltage capability enables it to reliably switch loads in high voltage environments, ensuring the stability and safety of the system.

2. **Power management**: In power management systems, FQU3P20-VB can be used for switching and regulating high voltage power supplies. The low on-resistance of this MOSFET helps reduce power consumption and improve the efficiency of power management systems.

3. **High voltage protection circuit**: Due to its high withstand voltage capability, FQU3P20-VB is suitable for high voltage protection circuits. In voltage protection modules, this MOSFET can prevent damage under overvoltage conditions and protect the safety of circuits and equipment.

4. **Power Converters**: In power converters, the FQU3P20-VB is capable of handling high voltage switching tasks. Its Trench technology provides low on-resistance and high switching efficiency, making it suitable for high voltage power conversion and regulation applications.

5. **Inverters and Electric Vehicles**: The FQU3P20-VB also performs well in high voltage applications such as inverters and electric vehicles. Its high withstand voltage and low on-resistance can effectively manage and control high voltage currents to ensure efficient operation of the system.

With its high voltage tolerance and high efficiency switching performance, the FQU3P20-VB provides a reliable solution for a variety of high voltage and high efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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