FQU3N50CTU-VB Product details
Product introduction:
FQU3N50CTU-VB is a single N-channel power MOSFET in TO251 package, designed for high voltage applications. Its drain-source voltage (VDS) can reach up to 650V, and the gate-source voltage (VGS) is ±30V, which is suitable for high voltage switching and power management tasks. The threshold voltage (Vth) is 3.5V, ensuring effective conduction at a lower gate voltage. The on-resistance (RDS(ON)) of FQU3N50CTU-VB is 2200mΩ@VGS=10V, supporting a drain current of up to 4A. Using Plannar technology, this MOSFET provides reliable switching performance and high power consumption handling capabilities in high voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2200mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar technology
- **Maximum power consumption**: 30W (max)
- **Junction temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 600pF
- **Reverse recovery time (trr)**: 200ns
Domain and module applications:
1. **High-voltage Switching Power Supply**: FQU3N50CTU-VB is very suitable for high-voltage switching power supplies (SMPS), especially in applications that handle voltages up to 650V. Its high voltage tolerance and reliable switching performance enable it to work stably in high-voltage power supplies and is widely used in industrial power supplies, medical power supplies, and high-voltage converters.
2. **Power Inverter**: In power inverter applications, FQU3N50CTU-VB can effectively handle high voltage and medium current switching tasks. It is suitable for solar inverters and uninterruptible power supply (UPS) systems to provide stable support for power conversion.
3. **Motor Drive**: Despite its relatively low drain current, FQU3N50CTU-VB can still be used in some medium and high voltage motor drive applications. It is suitable for motor drive circuits that require high voltage tolerance, such as stepper motor drives and some industrial motor control systems.
4. **High-voltage protection circuits**: FQU3N50CTU-VB also excels in high-voltage protection circuits, such as overvoltage protection and short-circuit protection. Its high voltage tolerance and high power handling capabilities enable it to ensure the safety and stability of circuits under high voltage conditions.
5. **Power converters and regulators**: In power converters and regulators, FQU3N50CTU-VB can be used to handle high-voltage switching tasks. It can effectively convert and regulate voltage in high-voltage DC-DC converters and voltage regulator modules to provide stable power support for various electronic devices.
These application examples demonstrate the wide applicability of FQU3N50CTU-VB MOSFET in high-voltage switching and power management applications, especially where high voltage tolerance and reliability are required.
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