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FQU2N90-VB Product details
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Product Introduction
FQU2N90-VB is a high voltage N-channel MOSFET with TO-251 package type. The device is designed to handle drain-source voltage (VDS) up to 900V and can withstand gate-source voltage (VGS) of ±30V. It adopts SJ_Multi-EPI technology, which can provide high voltage tolerance and reliable switching performance. Although its on-resistance is high (2700mΩ) at VGS of 10V, its stability and high voltage resistance make it suitable for high voltage application scenarios. FQU2N90-VB can handle currents up to 2A and performs well in applications that require high voltage tolerance.
FQU2N90-VB is a high voltage N-channel MOSFET with TO-251 package type. The device is designed to handle drain-source voltage (VDS) up to 900V and can withstand gate-source voltage (VGS) of ±30V. It adopts SJ_Multi-EPI technology, which can provide high voltage tolerance and reliable switching performance. Although its on-resistance is high (2700mΩ) at VGS of 10V, its stability and high voltage resistance make it suitable for high voltage application scenarios. FQU2N90-VB can handle currents up to 2A and performs well in applications that require high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | 2700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO-251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2700mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO-251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2700mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **High voltage switching**: The 900V drain-source voltage of the FQU2N90-VB makes it suitable for high voltage switching applications. In these applications, the MOSFET can stably switch high voltage circuits such as high voltage power switches and high voltage load control.
2. **High voltage power management**: This MOSFET can be used in high voltage power management systems, especially those that need to control high voltage loads. Despite its high on-resistance, its high voltage capability makes it a reliable choice for high voltage power management.
3. **High voltage inverter**: In high voltage inverter modules, the FQU2N90-VB is capable of handling voltages up to 900V, suitable for switch control in inverter systems. It can stably handle high voltage currents to ensure reliable operation of the inverter.
4. **High voltage electronic devices**: This MOSFET is suitable for a variety of high voltage electronic devices, such as high voltage battery management systems and high voltage power modules. In these applications, it is able to withstand high voltages and provide stable switching performance despite its high on-resistance.
5. **High Voltage Protection Circuit**: FQU2N90-VB can also be used in high voltage protection circuits to protect the system from overvoltage or other electrical faults. Its high voltage tolerance ensures the safety and stability of the system under high voltage conditions.
These application examples demonstrate the suitability of FQU2N90-VB in electronic systems that require high voltage handling. Despite its high on-resistance, its high voltage tolerance and stability make it excel in high voltage applications.
1. **High voltage switching**: The 900V drain-source voltage of the FQU2N90-VB makes it suitable for high voltage switching applications. In these applications, the MOSFET can stably switch high voltage circuits such as high voltage power switches and high voltage load control.
2. **High voltage power management**: This MOSFET can be used in high voltage power management systems, especially those that need to control high voltage loads. Despite its high on-resistance, its high voltage capability makes it a reliable choice for high voltage power management.
3. **High voltage inverter**: In high voltage inverter modules, the FQU2N90-VB is capable of handling voltages up to 900V, suitable for switch control in inverter systems. It can stably handle high voltage currents to ensure reliable operation of the inverter.
4. **High voltage electronic devices**: This MOSFET is suitable for a variety of high voltage electronic devices, such as high voltage battery management systems and high voltage power modules. In these applications, it is able to withstand high voltages and provide stable switching performance despite its high on-resistance.
5. **High Voltage Protection Circuit**: FQU2N90-VB can also be used in high voltage protection circuits to protect the system from overvoltage or other electrical faults. Its high voltage tolerance ensures the safety and stability of the system under high voltage conditions.
These application examples demonstrate the suitability of FQU2N90-VB in electronic systems that require high voltage handling. Despite its high on-resistance, its high voltage tolerance and stability make it excel in high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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