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FQU2N90TU_AM002-VB Product details
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FQU2N90TU_AM002-VB MOSFET Product Introduction
FQU2N90TU_AM002-VB is a high voltage N-channel power MOSFET in TO251 package. It has a drain-source voltage (VDS) tolerance of 900V, a gate-source voltage (VGS) range of ±30V, and a turn-on voltage (Vth) of 3.5V. The on-resistance (RDS(ON)@VGS=10V) of this MOSFET is 2700mΩ and the maximum drain current (ID) is 2A. FQU2N90TU_AM002-VB adopts SJ_Multi-EPI technology and is designed for high voltage and low current applications, with high voltage resistance and stable switching performance.
FQU2N90TU_AM002-VB is a high voltage N-channel power MOSFET in TO251 package. It has a drain-source voltage (VDS) tolerance of 900V, a gate-source voltage (VGS) range of ±30V, and a turn-on voltage (Vth) of 3.5V. The on-resistance (RDS(ON)@VGS=10V) of this MOSFET is 2700mΩ and the maximum drain current (ID) is 2A. FQU2N90TU_AM002-VB adopts SJ_Multi-EPI technology and is designed for high voltage and low current applications, with high voltage resistance and stable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | 2700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
FQU2N90TU_AM002-VB MOSFET Detailed parameter description
1. **Package type**: TO251
- The TO251 package provides good heat dissipation and electrical connection, suitable for power MOSFETs in high voltage applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for various switching and power conversion applications, providing efficient current control and switching characteristics.
3. **Drain-source voltage (VDS)**: 900V
- The maximum drain-source voltage is 900V, enabling it to work stably in a high voltage environment.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate voltage of ±30V, providing a flexible control range and high voltage tolerance.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage is 3.5V, which means that the MOSFET starts to conduct at this voltage, which is suitable for a variety of control circuit requirements.
6. **On-resistance (RDS(ON)@VGS=10V)**: 2700mΩ
- When the gate voltage is 10V, the on-resistance is 2700mΩ, providing a higher resistance value, suitable for low current applications.
7. **Drain current (ID)**: 2A
- The maximum drain current is 2A, which is suitable for high voltage applications that handle low current.
8. **Technology type**: SJ_Multi-EPI (Multi-layer EPI technology)
- SJ_Multi-EPI technology provides high voltage and high tolerance, making the MOSFET stable in high voltage environments.
1. **Package type**: TO251
- The TO251 package provides good heat dissipation and electrical connection, suitable for power MOSFETs in high voltage applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for various switching and power conversion applications, providing efficient current control and switching characteristics.
3. **Drain-source voltage (VDS)**: 900V
- The maximum drain-source voltage is 900V, enabling it to work stably in a high voltage environment.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate voltage of ±30V, providing a flexible control range and high voltage tolerance.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage is 3.5V, which means that the MOSFET starts to conduct at this voltage, which is suitable for a variety of control circuit requirements.
6. **On-resistance (RDS(ON)@VGS=10V)**: 2700mΩ
- When the gate voltage is 10V, the on-resistance is 2700mΩ, providing a higher resistance value, suitable for low current applications.
7. **Drain current (ID)**: 2A
- The maximum drain current is 2A, which is suitable for high voltage applications that handle low current.
8. **Technology type**: SJ_Multi-EPI (Multi-layer EPI technology)
- SJ_Multi-EPI technology provides high voltage and high tolerance, making the MOSFET stable in high voltage environments.
Domain and module applications：
FQU2N90TU_AM002-VB MOSFET Application Fields and Module Examples
The high voltage handling capability and moderate on-resistance of FQU2N90TU_AM002-VB MOSFET make it widely used in multiple fields and modules:
1. **High Voltage Switch**:
- FQU2N90TU_AM002-VB can be used in high voltage switching applications, such as high voltage power switch and protection circuit. Its 900V withstand voltage capability enables it to work stably under high voltage conditions, suitable for power switch and voltage protection circuit.
2. **Power Management Module**:
- In the power management module, this MOSFET can be used for switching control of high voltage power supply, providing stable power conversion and protection functions, suitable for high voltage power management system.
3. **Power Converter**:
- Suitable for high voltage power converter, such as high voltage DC-DC converter. Its high voltage withstand capability and stable switching performance can effectively handle the power management needs in high voltage power conversion.
4. **Industrial Control Systems**:
- FQU2N90TU_AM002-VB is suitable for high voltage switching applications in industrial control systems, such as high voltage switching in motor control and automation equipment, and can operate stably in industrial environments.
5. **Power Protection Circuits**:
- In power protection circuits, the high voltage withstand capability and low current handling characteristics of this MOSFET make it an ideal choice in power protection and overvoltage protection circuits to prevent overvoltage damage in circuits.
These application examples demonstrate the important role of the FQU2N90TU_AM002-VB MOSFET in high voltage environments, especially its application potential in power electronic modules that require high voltage withstand capability and stable switching performance.
The high voltage handling capability and moderate on-resistance of FQU2N90TU_AM002-VB MOSFET make it widely used in multiple fields and modules:
1. **High Voltage Switch**:
- FQU2N90TU_AM002-VB can be used in high voltage switching applications, such as high voltage power switch and protection circuit. Its 900V withstand voltage capability enables it to work stably under high voltage conditions, suitable for power switch and voltage protection circuit.
2. **Power Management Module**:
- In the power management module, this MOSFET can be used for switching control of high voltage power supply, providing stable power conversion and protection functions, suitable for high voltage power management system.
3. **Power Converter**:
- Suitable for high voltage power converter, such as high voltage DC-DC converter. Its high voltage withstand capability and stable switching performance can effectively handle the power management needs in high voltage power conversion.
4. **Industrial Control Systems**:
- FQU2N90TU_AM002-VB is suitable for high voltage switching applications in industrial control systems, such as high voltage switching in motor control and automation equipment, and can operate stably in industrial environments.
5. **Power Protection Circuits**:
- In power protection circuits, the high voltage withstand capability and low current handling characteristics of this MOSFET make it an ideal choice in power protection and overvoltage protection circuits to prevent overvoltage damage in circuits.
These application examples demonstrate the important role of the FQU2N90TU_AM002-VB MOSFET in high voltage environments, especially its application potential in power electronic modules that require high voltage withstand capability and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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