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FQU2N50B-VB Product details
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FQU2N50B-VB MOSFET Product Introduction
FQU2N50B-VB is a high voltage N-type MOSFET in TO251 package using Plannar technology. This MOSFET is designed for applications that require high voltage operation and can withstand drain-source voltages up to 650V, making it suitable for use in high voltage environments. Despite its high on-resistance, it provides stable switching performance under high voltage conditions and is suitable for use in various power management and switching circuits that require high voltage tolerance.
FQU2N50B-VB is a high voltage N-type MOSFET in TO251 package using Plannar technology. This MOSFET is designed for applications that require high voltage operation and can withstand drain-source voltages up to 650V, making it suitable for use in high voltage environments. Despite its high on-resistance, it provides stable switching performance under high voltage conditions and is suitable for use in various power management and switching circuits that require high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: Plannar
- **Package type**: TO251
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: Plannar
Domain and module applications：
Applications and module examples
1. **High voltage switch**: FQU2N50B-VB can be used as a high voltage switch component, especially in high voltage switching circuits. Its high drain-source voltage capability makes it suitable for applications that require high voltage switching, such as switching control of high voltage power supplies.
2. **Power management**: In power management modules, this MOSFET can be used for switching control of high voltage power supplies. Despite the high on-resistance, its high voltage tolerance makes it suitable for handling the switching tasks of high voltage power supplies and ensuring stable operation of the system.
3. **Power amplifier**: In power amplifier design, FQU2N50B-VB can be used as a switching component to handle the switching requirements of high voltage signals. Its high voltage tolerance enables it to work stably in power amplifiers and is suitable for high voltage signal processing applications.
4. **Inverter**: The FQU2N50B-VB is suitable for high voltage switching tasks in inverter circuits, which can convert DC power to AC power. Its high voltage withstand capability ensures reliability and efficiency in inverter operation.
5. **High Voltage Power Supply**: In high voltage power supply modules, this MOSFET can be used as a switching element to handle high voltage operations. Its high voltage capability makes it suitable for various high voltage power supply designs and control circuits, providing stable switching performance.
Through these application examples, the FQU2N50B-VB shows its importance in high voltage environments and is suitable for a variety of electronic designs and systems that require high voltage operation.
1. **High voltage switch**: FQU2N50B-VB can be used as a high voltage switch component, especially in high voltage switching circuits. Its high drain-source voltage capability makes it suitable for applications that require high voltage switching, such as switching control of high voltage power supplies.
2. **Power management**: In power management modules, this MOSFET can be used for switching control of high voltage power supplies. Despite the high on-resistance, its high voltage tolerance makes it suitable for handling the switching tasks of high voltage power supplies and ensuring stable operation of the system.
3. **Power amplifier**: In power amplifier design, FQU2N50B-VB can be used as a switching component to handle the switching requirements of high voltage signals. Its high voltage tolerance enables it to work stably in power amplifiers and is suitable for high voltage signal processing applications.
4. **Inverter**: The FQU2N50B-VB is suitable for high voltage switching tasks in inverter circuits, which can convert DC power to AC power. Its high voltage withstand capability ensures reliability and efficiency in inverter operation.
5. **High Voltage Power Supply**: In high voltage power supply modules, this MOSFET can be used as a switching element to handle high voltage operations. Its high voltage capability makes it suitable for various high voltage power supply designs and control circuits, providing stable switching performance.
Through these application examples, the FQU2N50B-VB shows its importance in high voltage environments and is suitable for a variety of electronic designs and systems that require high voltage operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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