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FQU1N80-VB Product details
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FQU1N80-VB Product Introduction
FQU1N80-VB is a high voltage N-type MOSFET in TO251 package, designed for high voltage applications. This MOSFET adopts SJ_Multi-EPI technology, which provides extremely high voltage tolerance and stable switching performance. Although its on-resistance is relatively high, it performs well in high voltage environments and is suitable for power management and power conversion applications that require high voltage tolerance.
FQU1N80-VB is a high voltage N-type MOSFET in TO251 package, designed for high voltage applications. This MOSFET adopts SJ_Multi-EPI technology, which provides extremely high voltage tolerance and stable switching performance. Although its on-resistance is relatively high, it performs well in high voltage environments and is suitable for power management and power conversion applications that require high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2600mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO251
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2600mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applications and Modules
1. **High Voltage Power Management**: The FQU1N80-VB can effectively handle high voltages in high voltage power management applications and is suitable for switching power supplies and voltage regulators. Its high voltage tolerance ensures the stability and reliability of the power system, especially in high voltage environments.
2. **Power Converter**: In power converters, this MOSFET is used for high voltage switching operations and is able to maintain reliable performance when handling high voltages despite its high on-resistance. It is suitable for use in high voltage power conversion modules such as high voltage DC-DC converters.
3. **Power Protection Circuit**: The FQU1N80-VB is suitable for power protection circuits, especially where high voltage protection is required. Its high voltage tolerance enables it to effectively provide overvoltage protection to prevent circuit damage or overload.
4. **Industrial Application**: In industrial power systems, this MOSFET can be used for high voltage switch control, such as motor drives and industrial automation systems. Its high voltage withstand capability ensures stable operation and reliability in harsh industrial environments.
5. **High Voltage Lighting System**: In high voltage lighting systems, such as high voltage fluorescent lamp drivers, the FQU1N80-VB can be used as a switching component to handle high voltage and medium current for efficient lighting control.
Through these application examples, we can see the importance of the FQU1N80-VB in high voltage applications, making it a key component in high voltage power management, power conversion and circuit protection systems.
1. **High Voltage Power Management**: The FQU1N80-VB can effectively handle high voltages in high voltage power management applications and is suitable for switching power supplies and voltage regulators. Its high voltage tolerance ensures the stability and reliability of the power system, especially in high voltage environments.
2. **Power Converter**: In power converters, this MOSFET is used for high voltage switching operations and is able to maintain reliable performance when handling high voltages despite its high on-resistance. It is suitable for use in high voltage power conversion modules such as high voltage DC-DC converters.
3. **Power Protection Circuit**: The FQU1N80-VB is suitable for power protection circuits, especially where high voltage protection is required. Its high voltage tolerance enables it to effectively provide overvoltage protection to prevent circuit damage or overload.
4. **Industrial Application**: In industrial power systems, this MOSFET can be used for high voltage switch control, such as motor drives and industrial automation systems. Its high voltage withstand capability ensures stable operation and reliability in harsh industrial environments.
5. **High Voltage Lighting System**: In high voltage lighting systems, such as high voltage fluorescent lamp drivers, the FQU1N80-VB can be used as a switching component to handle high voltage and medium current for efficient lighting control.
Through these application examples, we can see the importance of the FQU1N80-VB in high voltage applications, making it a key component in high voltage power management, power conversion and circuit protection systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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