中文
English
FQU1N60B-VB Product details
Back to previous pageProduct introduction：
FQU1N60B-VB Product Introduction
FQU1N60B-VB is a high voltage N-channel power MOSFET in TO-251 package. This MOSFET is designed for high voltage applications and has a drain-source withstand voltage of 650V and a drain current capability of 2A. FQU1N60B-VB uses Plannar technology, which optimizes the semiconductor crystal structure to improve the voltage withstand capability and stability of the device. Its on-resistance is 4300mΩ at VGS=10V, which makes it suitable for high voltage switching and power management tasks, especially in applications requiring higher voltage tolerance.
FQU1N60B-VB is a high voltage N-channel power MOSFET in TO-251 package. This MOSFET is designed for high voltage applications and has a drain-source withstand voltage of 650V and a drain current capability of 2A. FQU1N60B-VB uses Plannar technology, which optimizes the semiconductor crystal structure to improve the voltage withstand capability and stability of the device. Its on-resistance is 4300mΩ at VGS=10V, which makes it suitable for high voltage switching and power management tasks, especially in applications requiring higher voltage tolerance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
FQU1N60B-VB Detailed parameter description
- **Package type**: TO-251
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar (planar technology)
- **Package type**: TO-251
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar (planar technology)
Domain and module applications：
Application fields and module examples
Due to its high withstand voltage and stable performance, FQU1N60B-VB is suitable for the following typical fields and modules:
1. **High voltage switch**: FQU1N60B-VB is an ideal choice for high voltage switch applications. Its 650V withstand voltage capability enables it to reliably control high voltage switch operations. In power switches and high voltage control circuits, it can effectively handle current and protect the system from high voltage damage.
2. **Power converter**: In high voltage power converters, FQU1N60B-VB can be used for high voltage switch control. The high withstand voltage capability and stable performance of this MOSFET help improve the reliability and efficiency of the converter, and is suitable for power conversion and voltage regulation modules.
3. **Power management system**: In power management systems, FQU1N60B-VB can effectively manage the switching and regulation of high voltage power supplies. Its stable switching performance and high voltage withstand capability can help the system achieve high efficiency and stability.
4. **High voltage protection circuit**: This MOSFET is suitable for high voltage protection circuits, which can prevent damage under overvoltage conditions and ensure the safety of circuits and components. Its high withstand voltage characteristics enable it to provide reliable protection in high voltage environments.
With its high withstand voltage and stable switching characteristics, the FQU1N60B-VB provides a reliable solution for various high voltage applications, especially for electronic devices and circuits that require high voltage tolerance and stability.
Due to its high withstand voltage and stable performance, FQU1N60B-VB is suitable for the following typical fields and modules:
1. **High voltage switch**: FQU1N60B-VB is an ideal choice for high voltage switch applications. Its 650V withstand voltage capability enables it to reliably control high voltage switch operations. In power switches and high voltage control circuits, it can effectively handle current and protect the system from high voltage damage.
2. **Power converter**: In high voltage power converters, FQU1N60B-VB can be used for high voltage switch control. The high withstand voltage capability and stable performance of this MOSFET help improve the reliability and efficiency of the converter, and is suitable for power conversion and voltage regulation modules.
3. **Power management system**: In power management systems, FQU1N60B-VB can effectively manage the switching and regulation of high voltage power supplies. Its stable switching performance and high voltage withstand capability can help the system achieve high efficiency and stability.
4. **High voltage protection circuit**: This MOSFET is suitable for high voltage protection circuits, which can prevent damage under overvoltage conditions and ensure the safety of circuits and components. Its high withstand voltage characteristics enable it to provide reliable protection in high voltage environments.
With its high withstand voltage and stable switching characteristics, the FQU1N60B-VB provides a reliable solution for various high voltage applications, especially for electronic devices and circuits that require high voltage tolerance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
