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FQU16N25C-VB Product details
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FQU16N25C-VB MOSFET Product Introduction
FQU16N25C-VB is a medium-to-high voltage N-channel power MOSFET in TO251 package. It has a drain-source voltage (VDS) tolerance of 250V and a gate-source voltage (VGS) range of ±20V. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)@VGS=10V) is 176mΩ, and the maximum drain current (ID) is 17A. FQU16N25C-VB uses Trench technology and is designed for medium-to-high voltage and high current applications, with low on-resistance and good switching performance.
FQU16N25C-VB is a medium-to-high voltage N-channel power MOSFET in TO251 package. It has a drain-source voltage (VDS) tolerance of 250V and a gate-source voltage (VGS) range of ±20V. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)@VGS=10V) is 176mΩ, and the maximum drain current (ID) is 17A. FQU16N25C-VB uses Trench technology and is designed for medium-to-high voltage and high current applications, with low on-resistance and good switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
FQU16N25C-VB MOSFET Detailed parameter description
1. **Package type**: TO251
- TO251 package provides good thermal performance and electrical performance, suitable for medium power and voltage applications.
2. **Configuration**: Single N-channel
- Single N-channel configuration is suitable for various switching and power conversion applications, providing efficient current control and switching characteristics.
3. **Drain-source voltage (VDS)**: 250V
- The maximum drain-source voltage is 250V, suitable for medium voltage switching and power conversion applications.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate voltage of ±20V, providing flexible control range and stability.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage is 3.5V, which means that the MOSFET starts to conduct at this voltage, which is suitable for a variety of control circuit requirements.
6. **On-resistance (RDS(ON)@VGS=10V)**: 176mΩ
- When the gate voltage is 10V, the on-resistance is 176mΩ, providing lower switching losses and good thermal management performance.
7. **Drain current (ID)**: 17A
- The maximum drain current is 17A, which is suitable for high-voltage applications that handle medium currents.
8. **Technology type**: Trench
- Trench technology provides low on-resistance and efficient switching performance, suitable for power control and conversion in medium and high voltage applications.
1. **Package type**: TO251
- TO251 package provides good thermal performance and electrical performance, suitable for medium power and voltage applications.
2. **Configuration**: Single N-channel
- Single N-channel configuration is suitable for various switching and power conversion applications, providing efficient current control and switching characteristics.
3. **Drain-source voltage (VDS)**: 250V
- The maximum drain-source voltage is 250V, suitable for medium voltage switching and power conversion applications.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate voltage of ±20V, providing flexible control range and stability.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage is 3.5V, which means that the MOSFET starts to conduct at this voltage, which is suitable for a variety of control circuit requirements.
6. **On-resistance (RDS(ON)@VGS=10V)**: 176mΩ
- When the gate voltage is 10V, the on-resistance is 176mΩ, providing lower switching losses and good thermal management performance.
7. **Drain current (ID)**: 17A
- The maximum drain current is 17A, which is suitable for high-voltage applications that handle medium currents.
8. **Technology type**: Trench
- Trench technology provides low on-resistance and efficient switching performance, suitable for power control and conversion in medium and high voltage applications.
Domain and module applications：
FQU16N25C-VB MOSFET Application Fields and Module Examples
The medium-to-high voltage handling capability and low on-resistance of FQU16N25C-VB MOSFET make it widely used in multiple fields and modules:
1. **DC-DC Converter**:
- In DC-DC converter, FQU16N25C-VB can effectively handle medium voltage and current, provide efficient switching performance, and is suitable for various power conversion applications.
2. **Power Management Module**:
- Suitable for power management modules, including voltage regulators and current limiting circuits, which can stably control current and voltage to ensure system reliability and efficiency.
3. **Switching Power Supply**:
- In switching power supply applications, FQU16N25C-VB can be used for high voltage switching, providing low on-resistance and efficient switching operation to improve power conversion efficiency.
4. **Motor Driver**:
- Suitable for medium power motor driver modules, capable of handling high voltage and current, controlling the operation of motors, suitable for industrial and automotive motor control applications.
5. **High Voltage Switch**:
- In high voltage switching applications, FQU16N25C-VB can stably handle 250V voltage, suitable for switching control of high voltage circuits, such as power switches and protection circuits.
These application examples demonstrate the important role of FQU16N25C-VB MOSFET in medium and high voltage environments, especially its application potential in power electronic modules that require efficient switching performance and low on-resistance.
The medium-to-high voltage handling capability and low on-resistance of FQU16N25C-VB MOSFET make it widely used in multiple fields and modules:
1. **DC-DC Converter**:
- In DC-DC converter, FQU16N25C-VB can effectively handle medium voltage and current, provide efficient switching performance, and is suitable for various power conversion applications.
2. **Power Management Module**:
- Suitable for power management modules, including voltage regulators and current limiting circuits, which can stably control current and voltage to ensure system reliability and efficiency.
3. **Switching Power Supply**:
- In switching power supply applications, FQU16N25C-VB can be used for high voltage switching, providing low on-resistance and efficient switching operation to improve power conversion efficiency.
4. **Motor Driver**:
- Suitable for medium power motor driver modules, capable of handling high voltage and current, controlling the operation of motors, suitable for industrial and automotive motor control applications.
5. **High Voltage Switch**:
- In high voltage switching applications, FQU16N25C-VB can stably handle 250V voltage, suitable for switching control of high voltage circuits, such as power switches and protection circuits.
These application examples demonstrate the important role of FQU16N25C-VB MOSFET in medium and high voltage environments, especially its application potential in power electronic modules that require efficient switching performance and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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