中文
English
FQU16N05-VB Product details
Back to previous pageProduct introduction：
1. FQU16N05-VB Product Introduction
FQU16N05-VB is a single-channel N-type power MOSFET in TO251 package, designed for medium and low voltage applications. The device has a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V, supporting a drain current of up to 35A. FQU16N05-VB uses advanced Trench technology, with a threshold voltage (Vth) of 1.7V and an on-resistance (RDS(ON)) of 37mΩ @ VGS = 4.5V and 32mΩ @ VGS = 10V. These features give it the advantages of high efficiency and low power consumption in power management, motor drive and switching applications.
FQU16N05-VB is a single-channel N-type power MOSFET in TO251 package, designed for medium and low voltage applications. The device has a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V, supporting a drain current of up to 35A. FQU16N05-VB uses advanced Trench technology, with a threshold voltage (Vth) of 1.7V and an on-resistance (RDS(ON)) of 37mΩ @ VGS = 4.5V and 32mΩ @ VGS = 10V. These features give it the advantages of high efficiency and low power consumption in power management, motor drive and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 35A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description of FQU16N05-VB
1. **Package type**: TO251
- Small package design, suitable for space-constrained applications, and has good heat dissipation performance.
2. **Configuration**: Single-channel N-type MOSFET
- Single-channel design is suitable for various medium and low voltage switch applications.
3. **Drain-source voltage (VDS)**: 60V
- Suitable for applications in medium and low voltage environments, and can stably operate within the 60V voltage range.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a wider gate drive voltage to enhance the flexibility of switch control.
5. **Threshold voltage (Vth)**: 1.7V
- The lower threshold voltage makes this MOSFET easy to drive and can be turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**:
- 37mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- Low on-resistance provides lower power loss and high efficiency.
7. **Drain current (ID)**: 35A
- Supports drain current up to 35A, suitable for medium and high power applications.
8. **Technology**: Trench
- Adopts Trench technology, providing low on-resistance and high switching efficiency, suitable for various switching operations.
1. **Package type**: TO251
- Small package design, suitable for space-constrained applications, and has good heat dissipation performance.
2. **Configuration**: Single-channel N-type MOSFET
- Single-channel design is suitable for various medium and low voltage switch applications.
3. **Drain-source voltage (VDS)**: 60V
- Suitable for applications in medium and low voltage environments, and can stably operate within the 60V voltage range.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a wider gate drive voltage to enhance the flexibility of switch control.
5. **Threshold voltage (Vth)**: 1.7V
- The lower threshold voltage makes this MOSFET easy to drive and can be turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**:
- 37mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- Low on-resistance provides lower power loss and high efficiency.
7. **Drain current (ID)**: 35A
- Supports drain current up to 35A, suitable for medium and high power applications.
8. **Technology**: Trench
- Adopts Trench technology, providing low on-resistance and high switching efficiency, suitable for various switching operations.
Domain and module applications：
3. FQU16N05-VB Application Fields and Modules
1. **Power Management System**:
FQU16N05-VB can be used in switch mode power supplies (SMPS) and other power management modules. Its high current carrying capacity and low on-resistance make it perform well in power conversion and efficient power management, improving the overall efficiency of the system.
2. **Motor Drive**:
In motor drive applications, such as inverters and DC motor control systems, FQU16N05-VB can stably drive medium and high power motors as a switching device. Its high current and low on-resistance characteristics ensure the efficient operation and reliability of the motor control system.
3. **LED Lighting Control**:
FQU16N05-VB can be used in high-power LED lighting control systems as a switch controller. Its low on-resistance and high current capability are suitable for switching and dimming applications of high-power LED lamps, improving the energy efficiency and stability of lighting systems.
4. **Switching Application**:
This MOSFET is also suitable for various switching applications, such as power switching and signal switching circuits. Its low threshold voltage and fast switching characteristics make it perform well in these applications, ensuring the reliability and efficiency of the switching operation.
With its high current carrying capability and low on-resistance, the FQU16N05-VB provides excellent performance and efficient power management solutions in multiple medium and low voltage applications.
1. **Power Management System**:
FQU16N05-VB can be used in switch mode power supplies (SMPS) and other power management modules. Its high current carrying capacity and low on-resistance make it perform well in power conversion and efficient power management, improving the overall efficiency of the system.
2. **Motor Drive**:
In motor drive applications, such as inverters and DC motor control systems, FQU16N05-VB can stably drive medium and high power motors as a switching device. Its high current and low on-resistance characteristics ensure the efficient operation and reliability of the motor control system.
3. **LED Lighting Control**:
FQU16N05-VB can be used in high-power LED lighting control systems as a switch controller. Its low on-resistance and high current capability are suitable for switching and dimming applications of high-power LED lamps, improving the energy efficiency and stability of lighting systems.
4. **Switching Application**:
This MOSFET is also suitable for various switching applications, such as power switching and signal switching circuits. Its low threshold voltage and fast switching characteristics make it perform well in these applications, ensuring the reliability and efficiency of the switching operation.
With its high current carrying capability and low on-resistance, the FQU16N05-VB provides excellent performance and efficient power management solutions in multiple medium and low voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
