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FQU10N20-VB Product details
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FQU10N20-VB Product Introduction
FQU10N20-VB is a high-efficiency N-channel power MOSFET in a TO-251 package. Designed for medium voltage applications, this MOSFET has a drain-source withstand voltage of 200V and supports a drain current of up to 8A. FQU10N20-VB uses Trench technology, which reduces the on-resistance by creating elongated trenches in semiconductor materials, thereby improving the switching efficiency of the device. Its on-resistance is 270mΩ at VGS=10V, which makes it excellent in high-efficiency switching and power management.
FQU10N20-VB is a high-efficiency N-channel power MOSFET in a TO-251 package. Designed for medium voltage applications, this MOSFET has a drain-source withstand voltage of 200V and supports a drain current of up to 8A. FQU10N20-VB uses Trench technology, which reduces the on-resistance by creating elongated trenches in semiconductor materials, thereby improving the switching efficiency of the device. Its on-resistance is 270mΩ at VGS=10V, which makes it excellent in high-efficiency switching and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
FQU10N20-VB Detailed parameter description
- **Package type**: TO-251
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- **Drain current (ID)**: 8A
- **Technology**: Trench (trench technology)
- **Package type**: TO-251
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- **Drain current (ID)**: 8A
- **Technology**: Trench (trench technology)
Domain and module applications：
Application fields and module examples
FQU10N20-VB is suitable for various medium voltage applications due to its excellent electrical characteristics. Here are some typical application scenarios:
1. **Switching power supply**: In switching power supply applications, FQU10N20-VB can effectively control the switching operation of the power supply. Its lower on-resistance (270mΩ) helps improve system efficiency, reduce power consumption, and ensure the stability of the power supply.
2. **Motor drive**: This MOSFET is suitable for medium voltage motor drive systems and can handle the switching and control tasks of the motor. Its 8A drain current capability ensures stability and reliability of the motor operation.
3. **DC-DC converter**: FQU10N20-VB provides efficient switching control in DC-DC converter applications. Its Trench technology enables it to handle voltage conversion tasks with lower on-resistance and higher efficiency, thereby improving the overall performance of the converter.
4. **LED driver**: In the LED driver circuit, FQU10N20-VB can efficiently control the switching and brightness adjustment of LEDs. Its stable switching performance and low on-resistance ensure the efficient operation and reliability of the LED lighting system.
With its high withstand voltage, low on-resistance and high current capability, FQU10N20-VB provides an efficient power switch solution for various medium voltage applications.
FQU10N20-VB is suitable for various medium voltage applications due to its excellent electrical characteristics. Here are some typical application scenarios:
1. **Switching power supply**: In switching power supply applications, FQU10N20-VB can effectively control the switching operation of the power supply. Its lower on-resistance (270mΩ) helps improve system efficiency, reduce power consumption, and ensure the stability of the power supply.
2. **Motor drive**: This MOSFET is suitable for medium voltage motor drive systems and can handle the switching and control tasks of the motor. Its 8A drain current capability ensures stability and reliability of the motor operation.
3. **DC-DC converter**: FQU10N20-VB provides efficient switching control in DC-DC converter applications. Its Trench technology enables it to handle voltage conversion tasks with lower on-resistance and higher efficiency, thereby improving the overall performance of the converter.
4. **LED driver**: In the LED driver circuit, FQU10N20-VB can efficiently control the switching and brightness adjustment of LEDs. Its stable switching performance and low on-resistance ensure the efficient operation and reliability of the LED lighting system.
With its high withstand voltage, low on-resistance and high current capability, FQU10N20-VB provides an efficient power switch solution for various medium voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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