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FQU10N20C-VB Product details
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FQU10N20C-VB MOSFET: Product Introduction
The FQU10N20C-VB is a high voltage N-channel MOSFET in TO251 package, designed for switching applications requiring medium current and high voltage. Its maximum drain-source voltage (VDS) is 200V, suitable for high voltage environments. The on-resistance (RDS(ON)) of this MOSFET is 270mΩ@ VGS = 10V, and it can provide 8A of continuous drain current. Using Trench technology, this MOSFET provides good switching performance and low on-resistance, suitable for high voltage and medium current applications.
The FQU10N20C-VB is a high voltage N-channel MOSFET in TO251 package, designed for switching applications requiring medium current and high voltage. Its maximum drain-source voltage (VDS) is 200V, suitable for high voltage environments. The on-resistance (RDS(ON)) of this MOSFET is 270mΩ@ VGS = 10V, and it can provide 8A of continuous drain current. Using Trench technology, this MOSFET provides good switching performance and low on-resistance, suitable for high voltage and medium current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package:** TO251
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 200V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 3V
- **RDS(ON) (on-resistance):** 270mΩ @ VGS = 10V
- **ID (continuous drain current):** 8A
- **Technology:** Trench
- **Package:** TO251
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 200V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 3V
- **RDS(ON) (on-resistance):** 270mΩ @ VGS = 10V
- **ID (continuous drain current):** 8A
- **Technology:** Trench
Domain and module applications：
Application Examples
FQU10N20C-VB MOSFET has a wide range of applications in the following fields and modules:
1. **High-voltage switching power supply:** Due to its 200V withstand voltage capability, FQU10N20C-VB is suitable for high-voltage switching power supplies and power management systems. It can stably operate in a high-voltage environment, and the low on-resistance helps improve switching efficiency.
2. **Motor control:** In motor drive applications that require high voltage, this MOSFET can be used as a switching element, such as industrial motors and electric vehicle motor control. Its high voltage withstand capability and medium current handling capability make it suitable for driving and controlling motors.
3. **Inverters and power converters:** FQU10N20C-VB is suitable for inverters and high-voltage power converters, especially in power conversion scenarios that require high voltage. It can effectively handle high-voltage power conversion tasks and improve the overall efficiency of the system.
4. **Load switch and protection circuit:** This MOSFET can be used as a switching element in high voltage load switch and protection circuit, which can effectively control and protect the high voltage load in the circuit. Its high voltage capability and low on-resistance help to reduce power loss and improve system stability.
FQU10N20C-VB MOSFET has a wide range of applications in the following fields and modules:
1. **High-voltage switching power supply:** Due to its 200V withstand voltage capability, FQU10N20C-VB is suitable for high-voltage switching power supplies and power management systems. It can stably operate in a high-voltage environment, and the low on-resistance helps improve switching efficiency.
2. **Motor control:** In motor drive applications that require high voltage, this MOSFET can be used as a switching element, such as industrial motors and electric vehicle motor control. Its high voltage withstand capability and medium current handling capability make it suitable for driving and controlling motors.
3. **Inverters and power converters:** FQU10N20C-VB is suitable for inverters and high-voltage power converters, especially in power conversion scenarios that require high voltage. It can effectively handle high-voltage power conversion tasks and improve the overall efficiency of the system.
4. **Load switch and protection circuit:** This MOSFET can be used as a switching element in high voltage load switch and protection circuit, which can effectively control and protect the high voltage load in the circuit. Its high voltage capability and low on-resistance help to reduce power loss and improve system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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