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FQT7N10L-VB Product details
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FQT7N10L-VB MOSFET Product Introduction
FQT7N10L-VB is a low voltage N-channel power MOSFET in SOT223 package. Its maximum drain-source voltage (VDS) is 100V, and the gate-source voltage (VGS) range is ±20V. The turn-on voltage (Vth) is 1.8V, the on-resistance (RDS(ON)@VGS=4.5V) is 120mΩ, the on-resistance (RDS(ON)@VGS=10V) is 100mΩ, and the maximum drain current (ID) is 5A. FQT7N10L-VB uses Trench technology and is designed for low voltage switching and power conversion applications, providing low on-resistance and high efficiency switching performance.
FQT7N10L-VB is a low voltage N-channel power MOSFET in SOT223 package. Its maximum drain-source voltage (VDS) is 100V, and the gate-source voltage (VGS) range is ±20V. The turn-on voltage (Vth) is 1.8V, the on-resistance (RDS(ON)@VGS=4.5V) is 120mΩ, the on-resistance (RDS(ON)@VGS=10V) is 100mΩ, and the maximum drain current (ID) is 5A. FQT7N10L-VB uses Trench technology and is designed for low voltage switching and power conversion applications, providing low on-resistance and high efficiency switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
FQT7N10L-VB MOSFET Detailed parameter description
1. **Package type**: SOT223
- The SOT223 package has a small size and good heat dissipation performance, suitable for low-voltage and medium-power applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of switching and power conversion applications, providing effective current control and switching characteristics.
3. **Drain-source voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, suitable for low-to-medium voltage switching and power conversion applications.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate voltage of ±20V, ensuring flexibility and stability under various operating conditions.
5. **Throw-On Voltage (Vth)**: 1.8V
- The turn-on voltage is 1.8V, which means that the MOSFET starts to conduct at this voltage, which is suitable for low-voltage control circuits.
6. **On-Resistance (RDS(ON)@VGS=4.5V)**: 120mΩ
- When the gate voltage is 4.5V, the on-resistance is 120mΩ, providing good switching efficiency and thermal management performance.
7. **On-Resistance (RDS(ON)@VGS=10V)**: 100mΩ
- When the gate voltage is 10V, the on-resistance is reduced to 100mΩ, which is suitable for more efficient switching operations.
8. **Drain Current (ID)**: 5A
- The maximum drain current is 5A, which is suitable for applications with medium power requirements.
9. **Technology Type**: Trench
- Trench technology provides low on-resistance and efficient switching performance, suitable for low voltage and power density applications.
1. **Package type**: SOT223
- The SOT223 package has a small size and good heat dissipation performance, suitable for low-voltage and medium-power applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of switching and power conversion applications, providing effective current control and switching characteristics.
3. **Drain-source voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, suitable for low-to-medium voltage switching and power conversion applications.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate voltage of ±20V, ensuring flexibility and stability under various operating conditions.
5. **Throw-On Voltage (Vth)**: 1.8V
- The turn-on voltage is 1.8V, which means that the MOSFET starts to conduct at this voltage, which is suitable for low-voltage control circuits.
6. **On-Resistance (RDS(ON)@VGS=4.5V)**: 120mΩ
- When the gate voltage is 4.5V, the on-resistance is 120mΩ, providing good switching efficiency and thermal management performance.
7. **On-Resistance (RDS(ON)@VGS=10V)**: 100mΩ
- When the gate voltage is 10V, the on-resistance is reduced to 100mΩ, which is suitable for more efficient switching operations.
8. **Drain Current (ID)**: 5A
- The maximum drain current is 5A, which is suitable for applications with medium power requirements.
9. **Technology Type**: Trench
- Trench technology provides low on-resistance and efficient switching performance, suitable for low voltage and power density applications.
Domain and module applications：
FQT7N10L-VB MOSFET Application Fields and Module Examples
The low voltage withstand capability and low on-resistance of FQT7N10L-VB MOSFET make it widely used in multiple fields and modules:
1. **DC-DC Converter**:
- In DC-DC converter, FQT7N10L-VB can efficiently handle low voltage power supply, provide excellent switching performance and low on-resistance, and improve conversion efficiency.
2. **Power Management Module**:
- Suitable for various power management modules such as voltage regulators and current limiting circuits, which can effectively control current and voltage to ensure the stability and reliability of the system.
3. **Switching Power Supply**:
- In switching power supply applications, FQT7N10L-VB can handle low voltage switching operations, provide low on-resistance and high switching efficiency, and is suitable for power switching and regulation.
4. **Motor Driver**:
- Used in low-power motor drivers, this MOSFET can efficiently switch current and control the operation of the motor, suitable for low-voltage motor control applications.
5. **LED Driver Circuit**:
- In the LED driver circuit, FQT7N10L-VB provides reliable switching control, suitable for low-voltage LED lighting applications, ensuring efficient and stable lighting effects.
These application examples show the important role of FQT7N10L-VB MOSFET in low-voltage environments, especially its application potential in power electronic modules that require high switching efficiency and low on-resistance.
The low voltage withstand capability and low on-resistance of FQT7N10L-VB MOSFET make it widely used in multiple fields and modules:
1. **DC-DC Converter**:
- In DC-DC converter, FQT7N10L-VB can efficiently handle low voltage power supply, provide excellent switching performance and low on-resistance, and improve conversion efficiency.
2. **Power Management Module**:
- Suitable for various power management modules such as voltage regulators and current limiting circuits, which can effectively control current and voltage to ensure the stability and reliability of the system.
3. **Switching Power Supply**:
- In switching power supply applications, FQT7N10L-VB can handle low voltage switching operations, provide low on-resistance and high switching efficiency, and is suitable for power switching and regulation.
4. **Motor Driver**:
- Used in low-power motor drivers, this MOSFET can efficiently switch current and control the operation of the motor, suitable for low-voltage motor control applications.
5. **LED Driver Circuit**:
- In the LED driver circuit, FQT7N10L-VB provides reliable switching control, suitable for low-voltage LED lighting applications, ensuring efficient and stable lighting effects.
These application examples show the important role of FQT7N10L-VB MOSFET in low-voltage environments, especially its application potential in power electronic modules that require high switching efficiency and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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