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FQT4N25-VB Product details
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1. FQT4N25-VB Product Introduction
FQT4N25-VB is a single-channel N-type power MOSFET in a SOT223 package, designed for medium and low voltage applications. The device has a drain-source voltage (VDS) of up to 250V and a gate-source voltage (VGS) of ±20V, suitable for use in medium voltage environments. FQT4N25-VB uses high-performance Trench technology, with a threshold voltage (Vth) of 3V and an on-resistance (RDS(ON)) of 2000mΩ @ VGS = 10V, supporting a maximum drain current of 0.79A. This makes this MOSFET perform well in small and medium power switching applications, and is widely used in power management and signal switching.
FQT4N25-VB is a single-channel N-type power MOSFET in a SOT223 package, designed for medium and low voltage applications. The device has a drain-source voltage (VDS) of up to 250V and a gate-source voltage (VGS) of ±20V, suitable for use in medium voltage environments. FQT4N25-VB uses high-performance Trench technology, with a threshold voltage (Vth) of 3V and an on-resistance (RDS(ON)) of 2000mΩ @ VGS = 10V, supporting a maximum drain current of 0.79A. This makes this MOSFET perform well in small and medium power switching applications, and is widely used in power management and signal switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. Detailed parameter description of FQT4N25-VB
1. **Package type**: SOT223
- Small package design, suitable for space-constrained applications, and has good heat dissipation performance.
2. **Configuration**: Single-channel N-type MOSFET
- Single-channel design is suitable for various switching applications and simplifies circuit design.
3. **Drain-source voltage (VDS)**: 250V
- Suitable for applications in medium voltage environments, and can stably operate in the voltage range of 250V.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a wide range of gate drive voltages and provides better switching control capabilities.
5. **Threshold voltage (Vth)**: 3V
- Lower gate turn-on voltage makes the device easy to drive.
6. **On-resistance (RDS(ON))**: 2000mΩ @ VGS = 10V
- With higher on-resistance, suitable for low to medium power applications, with certain switching losses.
7. **Drain current (ID)**: 0.79A
- Supports a maximum drain current of 0.79A, suitable for switching applications of low to medium power loads.
8. **Technology**: Trench
- Adopts Trench technology, providing low on-resistance and high efficiency, suitable for various switching operations.
1. **Package type**: SOT223
- Small package design, suitable for space-constrained applications, and has good heat dissipation performance.
2. **Configuration**: Single-channel N-type MOSFET
- Single-channel design is suitable for various switching applications and simplifies circuit design.
3. **Drain-source voltage (VDS)**: 250V
- Suitable for applications in medium voltage environments, and can stably operate in the voltage range of 250V.
4. **Gate-source voltage (VGS)**: ±20V
- Supports a wide range of gate drive voltages and provides better switching control capabilities.
5. **Threshold voltage (Vth)**: 3V
- Lower gate turn-on voltage makes the device easy to drive.
6. **On-resistance (RDS(ON))**: 2000mΩ @ VGS = 10V
- With higher on-resistance, suitable for low to medium power applications, with certain switching losses.
7. **Drain current (ID)**: 0.79A
- Supports a maximum drain current of 0.79A, suitable for switching applications of low to medium power loads.
8. **Technology**: Trench
- Adopts Trench technology, providing low on-resistance and high efficiency, suitable for various switching operations.
Domain and module applications：
3. FQT4N25-VB Application Fields and Modules
1. **Power Management System**:
FQT4N25-VB can be used in power management modules such as switching power supplies (SMPS) and power converters. Although its current carrying capacity is low, its high withstand voltage and small package make it suitable for medium and low power power management and conversion applications.
2. **Signal Switch**:
In the signal switching circuit, FQT4N25-VB can be used as a switching device for applications that require high voltage withstand capability and low on-resistance. Its low threshold voltage makes it perform well when switching signals, ensuring the stability of signal transmission.
3. **Low Power Motor Control**:
This MOSFET is also suitable for low power motor control systems, such as switches in small fans or power tools. Its low current carrying capacity and good switching characteristics make it perform well in low power drive applications.
4. **Lighting control**:
In low-medium voltage LED lighting control systems, the FQT4N25-VB can be used as a switch controller. Although its current capability is limited, its high withstand voltage and stable switching performance make it suitable for LED lighting applications that require high voltage stability.
These features make the FQT4N25-VB an ideal choice for applications in low-medium power, high voltage environments, providing stable and reliable performance in multiple fields.
1. **Power Management System**:
FQT4N25-VB can be used in power management modules such as switching power supplies (SMPS) and power converters. Although its current carrying capacity is low, its high withstand voltage and small package make it suitable for medium and low power power management and conversion applications.
2. **Signal Switch**:
In the signal switching circuit, FQT4N25-VB can be used as a switching device for applications that require high voltage withstand capability and low on-resistance. Its low threshold voltage makes it perform well when switching signals, ensuring the stability of signal transmission.
3. **Low Power Motor Control**:
This MOSFET is also suitable for low power motor control systems, such as switches in small fans or power tools. Its low current carrying capacity and good switching characteristics make it perform well in low power drive applications.
4. **Lighting control**:
In low-medium voltage LED lighting control systems, the FQT4N25-VB can be used as a switch controller. Although its current capability is limited, its high withstand voltage and stable switching performance make it suitable for LED lighting applications that require high voltage stability.
These features make the FQT4N25-VB an ideal choice for applications in low-medium power, high voltage environments, providing stable and reliable performance in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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