FQT4N20L-VB Product details
Product introduction:
The FQT4N20L-VB is a high voltage N-channel MOSFET in a SOT223 package manufactured using Trench technology. This MOSFET is designed for medium voltage applications and can withstand drain-source voltages up to 200V. It has good switching performance and relatively low on-resistance, making it an excellent performer in circuits that require high voltage resistance and efficient switching. The FQT4N20L-VB is particularly suitable for applications that require small packages and high voltage performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | 1200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 200V | 3V | 1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1200mΩ @ VGS = 10V
- **Drain current (ID)**: 1A
- **Technology type**: Trench
Domain and module applications:
The high voltage capability and efficient switching characteristics of FQT4N20L-VB make it suitable for the following fields and modules:
1. **Medium voltage power management**: In medium voltage power management systems, such as DC-DC converters and power adapters, FQT4N20L-VB can stably handle 200V. Its lower on-resistance helps improve power efficiency and is suitable for power management modules that require stable voltage control.
2. **Switching power supply**: In switching power supply design, FQT4N20L-VB can be used as a switching element to control the switching operation of the power supply. Its high voltage tolerance and switching performance make it suitable for high voltage switching power supply applications, such as power adapters and power modules.
3. **Motor drive system**: In motor control systems that require high voltage drive, FQT4N20L-VB can be used for motor switching control. Its high withstand voltage and low on-resistance ensure high efficiency and stability of the motor drive system, and is suitable for medium voltage motor drive applications.
4. **High voltage relay drive**: FQT4N20L-VB is suitable for driving circuits of high voltage relays. In relays that need to control high voltage loads, this MOSFET can provide reliable switching operation and perform well in high voltage environments.
5. **Power switch application**: In various power switch applications, FQT4N20L-VB can handle high voltages of 200V and is suitable for high voltage power switch modules. Its efficient switching performance and high voltage withstand capability make it an ideal choice for high voltage power switching circuits.
Through these application examples, FQT4N20L-VB shows its importance in medium voltage and high voltage applications, providing reliable and efficient switching solutions for small package circuits and systems that need high voltage handling.
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