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FQT1N60CTF-VB Product details
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FQT1N60CTF-VB Product Introduction
FQT1N60CTF-VB is an N-channel power MOSFET in a SOT-223 package. Designed for high voltage applications, this MOSFET has a drain-source withstand voltage of 650V, making it suitable for operation in high voltage environments. FQT1N60CTF-VB uses Plannar technology, which enhances the stability and performance of the device by optimizing the semiconductor structure. Its on-resistance is 10000mΩ (VGS=4.5V) and 8000mΩ (VGS=10V) at different gate voltages, supporting a drain current of up to 1A. This makes the FQT1N60CTF-VB suitable for high voltage switching and power management tasks.
FQT1N60CTF-VB is an N-channel power MOSFET in a SOT-223 package. Designed for high voltage applications, this MOSFET has a drain-source withstand voltage of 650V, making it suitable for operation in high voltage environments. FQT1N60CTF-VB uses Plannar technology, which enhances the stability and performance of the device by optimizing the semiconductor structure. Its on-resistance is 10000mΩ (VGS=4.5V) and 8000mΩ (VGS=10V) at different gate voltages, supporting a drain current of up to 1A. This makes the FQT1N60CTF-VB suitable for high voltage switching and power management tasks.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | 8000mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
FQT1N60CTF-VB Detailed parameter description
- **Package type**: SOT-223
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 10000mΩ @ VGS=4.5V
- 8000mΩ @ VGS=10V
- **Drain current (ID)**: 1A
- **Technology**: Plannar (planar technology)
- **Package type**: SOT-223
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 10000mΩ @ VGS=4.5V
- 8000mΩ @ VGS=10V
- **Drain current (ID)**: 1A
- **Technology**: Plannar (planar technology)
Domain and module applications：
Applications and module examples
FQT1N60CTF-VB is suitable for multiple high voltage and low current applications. Here are some typical application scenarios:
1. **High voltage switching**: FQT1N60CTF-VB performs well in high voltage switching applications. Its 650V drain-source withstand voltage enables it to switch reliably in high voltage environments, suitable for high voltage power switches and control tasks in high voltage electronic devices.
2. **Power management**: In power management systems, FQT1N60CTF-VB can effectively control the switching of high voltage power supplies to ensure the stability and safety of the power supply. Its planar technology helps to improve the reliability and efficiency of the overall system.
3. **High voltage protection**: This MOSFET can be used in high voltage protection circuits to prevent overvoltage conditions through effective switching control, protecting circuits and components from damage.
4. **Small Power Converters**: The high withstand voltage and stability of the FQT1N60CTF-VB make it an ideal choice in small high voltage power converters. Despite its high on-resistance, it still provides reliable performance in low current applications.
With its high withstand voltage capability and stable switching performance, the FQT1N60CTF-VB provides a reliable solution for high voltage applications and is suitable for a variety of electronic devices that require high voltage and low current control.
FQT1N60CTF-VB is suitable for multiple high voltage and low current applications. Here are some typical application scenarios:
1. **High voltage switching**: FQT1N60CTF-VB performs well in high voltage switching applications. Its 650V drain-source withstand voltage enables it to switch reliably in high voltage environments, suitable for high voltage power switches and control tasks in high voltage electronic devices.
2. **Power management**: In power management systems, FQT1N60CTF-VB can effectively control the switching of high voltage power supplies to ensure the stability and safety of the power supply. Its planar technology helps to improve the reliability and efficiency of the overall system.
3. **High voltage protection**: This MOSFET can be used in high voltage protection circuits to prevent overvoltage conditions through effective switching control, protecting circuits and components from damage.
4. **Small Power Converters**: The high withstand voltage and stability of the FQT1N60CTF-VB make it an ideal choice in small high voltage power converters. Despite its high on-resistance, it still provides reliable performance in low current applications.
With its high withstand voltage capability and stable switching performance, the FQT1N60CTF-VB provides a reliable solution for high voltage applications and is suitable for a variety of electronic devices that require high voltage and low current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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