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FQPF9N65C-VB Product details
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FQPF9N65C-VB MOSFET Product Introduction
FQPF9N65C-VB is a high voltage N-channel power MOSFET in TO220F package. It has a drain-source voltage (VDS) tolerance of 650V and a gate-source voltage (VGS) range of ±30V. Its turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)@VGS=10V) is 830mΩ, and the maximum drain current (ID) is 10A. FQPF9N65C-VB adopts planar technology and is designed for high voltage and medium current applications. It is suitable for high voltage switching and power management applications.
FQPF9N65C-VB is a high voltage N-channel power MOSFET in TO220F package. It has a drain-source voltage (VDS) tolerance of 650V and a gate-source voltage (VGS) range of ±30V. Its turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)@VGS=10V) is 830mΩ, and the maximum drain current (ID) is 10A. FQPF9N65C-VB adopts planar technology and is designed for high voltage and medium current applications. It is suitable for high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF9N65C-VB MOSFET Detailed Parameter Description
1. **Package Type**: TO220F
- The TO220F package provides good heat dissipation and is suitable for high voltage and medium power applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of switching and power conversion applications, and can effectively handle high voltage and current.
3. **Drain-Source Voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can withstand the working requirements in high voltage environments.
4. **Gate-Source Voltage (VGS)**: ±30V
- Supports gate voltage of ±30V, ensuring the flexibility and stability of the device under various operating conditions.
5. **Throw-on voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, indicating that the MOSFET starts to conduct at this voltage, which is suitable for various control circuits.
6. **On-resistance (RDS(ON)@VGS=10V)**: 830mΩ
- The on-resistance is 830mΩ, providing reasonable switching efficiency and thermal management capabilities under high voltage conditions.
7. **Drain current (ID)**: 10A
- The maximum drain current is 10A, suitable for high voltage applications that handle medium currents.
8. **Technology type**: Plannar
- Planar technology design provides high voltage handling capabilities, and although the on-resistance is higher, it is reliable and stable in high voltage applications.
1. **Package Type**: TO220F
- The TO220F package provides good heat dissipation and is suitable for high voltage and medium power applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of switching and power conversion applications, and can effectively handle high voltage and current.
3. **Drain-Source Voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, which can withstand the working requirements in high voltage environments.
4. **Gate-Source Voltage (VGS)**: ±30V
- Supports gate voltage of ±30V, ensuring the flexibility and stability of the device under various operating conditions.
5. **Throw-on voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, indicating that the MOSFET starts to conduct at this voltage, which is suitable for various control circuits.
6. **On-resistance (RDS(ON)@VGS=10V)**: 830mΩ
- The on-resistance is 830mΩ, providing reasonable switching efficiency and thermal management capabilities under high voltage conditions.
7. **Drain current (ID)**: 10A
- The maximum drain current is 10A, suitable for high voltage applications that handle medium currents.
8. **Technology type**: Plannar
- Planar technology design provides high voltage handling capabilities, and although the on-resistance is higher, it is reliable and stable in high voltage applications.
Domain and module applications：
FQPF9N65C-VB MOSFET Application Fields and Module Examples
The high voltage tolerance and medium current handling capability of FQPF9N65C-VB MOSFET make it widely used in multiple fields and modules:
1. **High Voltage Power Switch**:
- In high voltage power switch applications, FQPF9N65C-VB can stably handle voltages up to 650V, suitable for high voltage power switch control, ensuring the reliability and efficiency of the power system.
2. **Power Converter**:
- Suitable for power conversion modules such as DC-DC converters and AC-DC adapters, especially in situations where high voltage handling is required, it can effectively convert power and improve the efficiency of the system.
3. **Inverter**:
- In photovoltaic systems and other inverter applications, FQPF9N65C-VB MOSFET can handle high voltages, ensuring stability and efficiency in the DC to AC conversion process.
4. **Motor Driver**:
- Suitable for motor driver modules, especially in industrial motor control systems that require high voltage handling capabilities, capable of providing stable current switching characteristics.
5. **High Voltage Protection Circuit**:
- In high voltage protection circuits, FQPF9N65C-VB can be used in high voltage circuit breakers and overvoltage protection circuits to protect circuit components from high voltage.
These application examples demonstrate the important role of FQPF9N65C-VB MOSFET in high voltage environments, especially in power electronic modules that require high voltage resistance and reliability.
The high voltage tolerance and medium current handling capability of FQPF9N65C-VB MOSFET make it widely used in multiple fields and modules:
1. **High Voltage Power Switch**:
- In high voltage power switch applications, FQPF9N65C-VB can stably handle voltages up to 650V, suitable for high voltage power switch control, ensuring the reliability and efficiency of the power system.
2. **Power Converter**:
- Suitable for power conversion modules such as DC-DC converters and AC-DC adapters, especially in situations where high voltage handling is required, it can effectively convert power and improve the efficiency of the system.
3. **Inverter**:
- In photovoltaic systems and other inverter applications, FQPF9N65C-VB MOSFET can handle high voltages, ensuring stability and efficiency in the DC to AC conversion process.
4. **Motor Driver**:
- Suitable for motor driver modules, especially in industrial motor control systems that require high voltage handling capabilities, capable of providing stable current switching characteristics.
5. **High Voltage Protection Circuit**:
- In high voltage protection circuits, FQPF9N65C-VB can be used in high voltage circuit breakers and overvoltage protection circuits to protect circuit components from high voltage.
These application examples demonstrate the important role of FQPF9N65C-VB MOSFET in high voltage environments, especially in power electronic modules that require high voltage resistance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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