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FQPF9N50-VB Product details
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1. FQPF9N50-VB Product Introduction
FQPF9N50-VB is a single-channel N-type power MOSFET in TO220F package, designed for medium and high voltage applications. The device has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V, suitable for scenarios requiring high voltage resistance and high current carrying capacity. FQPF9N50-VB uses planar technology, with a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 680mΩ @ VGS = 10V, and a maximum drain current (ID) of 12A. These features make this MOSFET perform well in a variety of power management, motor control, and industrial applications.
FQPF9N50-VB is a single-channel N-type power MOSFET in TO220F package, designed for medium and high voltage applications. The device has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V, suitable for scenarios requiring high voltage resistance and high current carrying capacity. FQPF9N50-VB uses planar technology, with a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 680mΩ @ VGS = 10V, and a maximum drain current (ID) of 12A. These features make this MOSFET perform well in a variety of power management, motor control, and industrial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description of FQPF9N50-VB
1. **Package type**: TO220F
- Provides good thermal management and heat dissipation performance, suitable for high power applications.
2. **Configuration**: Single-channel N-type MOSFET
- Suitable for high voltage switching applications, single-channel design is easy to integrate and use.
3. **Drain-source voltage (VDS)**: 650V
- Able to work stably in high voltage environment, suitable for high voltage power supply and control applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a wide range of gate drive voltages, improving control flexibility.
5. **Threshold voltage (Vth)**: 3.5V
- Provides a moderate gate turn-on voltage, making the drive circuit design relatively simple.
6. **On-resistance (RDS(ON))**: 680mΩ @ VGS = 10V
- With lower on-resistance, it can reduce switching losses and improve system efficiency.
7. **Drain current (ID)**: 12A
- Supports higher drain current and is suitable for handling medium power loads.
8. **Technology**: Planar
- Adopts planar technology to provide stable electrical performance and is suitable for standard power switching applications.
1. **Package type**: TO220F
- Provides good thermal management and heat dissipation performance, suitable for high power applications.
2. **Configuration**: Single-channel N-type MOSFET
- Suitable for high voltage switching applications, single-channel design is easy to integrate and use.
3. **Drain-source voltage (VDS)**: 650V
- Able to work stably in high voltage environment, suitable for high voltage power supply and control applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a wide range of gate drive voltages, improving control flexibility.
5. **Threshold voltage (Vth)**: 3.5V
- Provides a moderate gate turn-on voltage, making the drive circuit design relatively simple.
6. **On-resistance (RDS(ON))**: 680mΩ @ VGS = 10V
- With lower on-resistance, it can reduce switching losses and improve system efficiency.
7. **Drain current (ID)**: 12A
- Supports higher drain current and is suitable for handling medium power loads.
8. **Technology**: Planar
- Adopts planar technology to provide stable electrical performance and is suitable for standard power switching applications.
Domain and module applications：
3. FQPF9N50-VB Application Fields and Modules
1. **Power Management System**:
FQPF9N50-VB is suitable for switch mode power supply (SMPS) and other power management modules. Its high withstand voltage and low on-resistance characteristics enable it to effectively handle high voltage and high current in power conversion, improving the efficiency and stability of the system.
2. **Industrial Drive Module**:
In industrial drive modules, such as inverters and motor drives, FQPF9N50-VB can be used as a key switching device. Its high current handling capability and high voltage tolerance ensure stable driving of industrial equipment, suitable for complex industrial application environments.
3. **Motor Control System**:
This MOSFET can also be used in motor control systems, especially the start-up and operation control of high-voltage motors. Its fast switching characteristics and high current carrying capacity make it suitable for switching operations in motor drives, effectively improving the performance and reliability of motor control systems.
4. **Lighting system**:
In high-voltage LED lighting control, FQPF9N50-VB can be used as part of the driver circuit. Its high voltage and low loss characteristics enable it to operate stably in harsh environments, improving the energy efficiency and service life of the lighting system.
With its high voltage carrying capacity and excellent switching characteristics, FQPF9N50-VB provides reliable performance and efficient power management solutions in multiple application fields.
1. **Power Management System**:
FQPF9N50-VB is suitable for switch mode power supply (SMPS) and other power management modules. Its high withstand voltage and low on-resistance characteristics enable it to effectively handle high voltage and high current in power conversion, improving the efficiency and stability of the system.
2. **Industrial Drive Module**:
In industrial drive modules, such as inverters and motor drives, FQPF9N50-VB can be used as a key switching device. Its high current handling capability and high voltage tolerance ensure stable driving of industrial equipment, suitable for complex industrial application environments.
3. **Motor Control System**:
This MOSFET can also be used in motor control systems, especially the start-up and operation control of high-voltage motors. Its fast switching characteristics and high current carrying capacity make it suitable for switching operations in motor drives, effectively improving the performance and reliability of motor control systems.
4. **Lighting system**:
In high-voltage LED lighting control, FQPF9N50-VB can be used as part of the driver circuit. Its high voltage and low loss characteristics enable it to operate stably in harsh environments, improving the energy efficiency and service life of the lighting system.
With its high voltage carrying capacity and excellent switching characteristics, FQPF9N50-VB provides reliable performance and efficient power management solutions in multiple application fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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