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FQPF9N08-VB Product details
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FQPF9N08-VB Product Introduction
FQPF9N08-VB is a high-efficiency N-channel power MOSFET in a TO-220F package. Designed for medium voltage applications, this MOSFET has a drain-source withstand voltage of 100V and is suitable for a variety of switching and power control tasks. FQPF9N08-VB uses Trench technology, which reduces the on-resistance by creating elongated trenches in semiconductor materials, thereby improving switching efficiency and reducing power consumption. The device offers an on-resistance as low as 86mΩ and a drain current capability of 18A, making it an outstanding performer in high-performance applications.
FQPF9N08-VB is a high-efficiency N-channel power MOSFET in a TO-220F package. Designed for medium voltage applications, this MOSFET has a drain-source withstand voltage of 100V and is suitable for a variety of switching and power control tasks. FQPF9N08-VB uses Trench technology, which reduces the on-resistance by creating elongated trenches in semiconductor materials, thereby improving switching efficiency and reducing power consumption. The device offers an on-resistance as low as 86mΩ and a drain current capability of 18A, making it an outstanding performer in high-performance applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF9N08-VB Detailed parameter description
- **Package type**: TO-220F
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench (trench technology)
- **Package type**: TO-220F
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench (trench technology)
Domain and module applications：
Applications and module examples
FQPF9N08-VB is suitable for a number of medium voltage applications due to its excellent electrical characteristics:
1. **Switching power supply**: In switching power supply design, FQPF9N08-VB can effectively control the switching operation of the power supply. Its low on-resistance (86mΩ) helps improve the energy efficiency of the system, reduce power consumption, and ensure that the switching power supply maintains stability during efficient operation.
2. **Motor drive**: This MOSFET is suitable for medium voltage motor drive applications and can stably control the start and stop of the motor. Its 18A drain current capability enables it to handle a variety of motor drive requirements and ensure the reliability of motor operation.
3. **DC-DC converter**: FQPF9N08-VB is suitable for DC-DC converter applications, providing efficient switching operation during voltage conversion. Its low RDS(ON) characteristics help improve the overall efficiency of the converter and reduce energy losses.
4. **LED driver**: In the LED driver circuit, FQPF9N08-VB can effectively control the switching and brightness adjustment of LED. Its efficient switching capability and low on-resistance ensure the stability and high efficiency of the LED lighting system.
With its low on-resistance and high current capability, FQPF9N08-VB provides a reliable power switch solution for medium voltage applications, suitable for a variety of electronic devices that require high efficiency and stability.
FQPF9N08-VB is suitable for a number of medium voltage applications due to its excellent electrical characteristics:
1. **Switching power supply**: In switching power supply design, FQPF9N08-VB can effectively control the switching operation of the power supply. Its low on-resistance (86mΩ) helps improve the energy efficiency of the system, reduce power consumption, and ensure that the switching power supply maintains stability during efficient operation.
2. **Motor drive**: This MOSFET is suitable for medium voltage motor drive applications and can stably control the start and stop of the motor. Its 18A drain current capability enables it to handle a variety of motor drive requirements and ensure the reliability of motor operation.
3. **DC-DC converter**: FQPF9N08-VB is suitable for DC-DC converter applications, providing efficient switching operation during voltage conversion. Its low RDS(ON) characteristics help improve the overall efficiency of the converter and reduce energy losses.
4. **LED driver**: In the LED driver circuit, FQPF9N08-VB can effectively control the switching and brightness adjustment of LED. Its efficient switching capability and low on-resistance ensure the stability and high efficiency of the LED lighting system.
With its low on-resistance and high current capability, FQPF9N08-VB provides a reliable power switch solution for medium voltage applications, suitable for a variety of electronic devices that require high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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