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FQPF9N08L-VB Product details

Product introduction:

1. FQPF9N08L-VB MOSFET Product Introduction

FQPF9N08L-VB is a high-performance single N-channel power MOSFET packaged in TO220F, designed for medium and high voltage applications. Its drain-source voltage (VDS) can reach 100V, and the gate-source voltage (VGS) is ±20V, which is suitable for various medium voltage switching and power management applications. The threshold voltage (Vth) is 1.8V, ensuring effective conduction at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 86mΩ@VGS=10V, supporting a drain current of up to 18A. FQPF9N08L-VB uses Trench technology, providing efficient switching performance and excellent thermal management, suitable for a variety of power electronics applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 100V 1.8V 18A 86mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 100V 1.8V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 100V 1.8V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. FQPF9N08L-VB MOSFET Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 86mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench technology
- **Maximum power consumption**: 70W (max)
- **Junction temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 2300pF
- **Reverse recovery time (trr)**: 140ns

Domain and module applications:

3. FQPF9N08L-VB MOSFET Applications and Module Examples

1. **Switching Power Supply (SMPS)**: FQPF9N08L-VB is suitable for switching power supply modules, especially in situations where medium voltage and current need to be handled. Its low on-resistance and high current handling capability enable it to efficiently convert electrical energy, ensure the stability and efficiency of the power supply, and is widely used in computer power supplies, TV power supplies, and communication equipment power supplies.

2. **Motor Drive**: In motor control and drive applications, FQPF9N08L-VB can effectively control medium voltage motors. Its high current carrying capacity and low on-resistance make it suitable for switching and controlling DC motors and stepper motors, and is suitable for motor drive systems in industrial automation and home appliances.

3. **Power Management**: FQPF9N08L-VB can be used in various power management modules, such as DC-DC converters and battery management systems. Its low on-resistance and good thermal management characteristics ensure efficient performance in power conversion and battery management, and are used in power tools, electric vehicles and portable devices.

4. **High-efficiency lighting**: In LED lighting and other high-efficiency lighting systems, FQPF9N08L-VB is able to handle medium voltages and control high current loads. Its efficient switching characteristics and low on-resistance make it suitable for use in LED driver circuits and smart lighting systems to provide stable and reliable lighting control.

5. **Power converter**: FQPF9N08L-VB performs well in power converter applications and can efficiently handle medium voltage switching tasks. Its Trench technology ensures efficient switching performance and low power consumption, and is suitable for a variety of power conversion applications, including chargers, inverters and regulators.

These application examples demonstrate the wide applicability of FQPF9N08L-VB MOSFET in medium and high voltage and power management fields, especially in switching applications that require high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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