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FQPF8N90C-VB Product details
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FQPF8N90C-VB MOSFET Product Introduction
FQPF8N90C-VB is a high voltage N-channel power MOSFET in TO220F package. It can withstand drain-source voltage (VDS) up to 900V and gate-source voltage (VGS) of ±30V. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)@VGS=10V) is 1500mΩ, and the maximum drain current (ID) is 5A. FQPF8N90C-VB adopts SJ_Multi-EPI technology, which is designed for high voltage applications and suitable for switch control of high voltage power supply and power conversion.
FQPF8N90C-VB is a high voltage N-channel power MOSFET in TO220F package. It can withstand drain-source voltage (VDS) up to 900V and gate-source voltage (VGS) of ±30V. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)@VGS=10V) is 1500mΩ, and the maximum drain current (ID) is 5A. FQPF8N90C-VB adopts SJ_Multi-EPI technology, which is designed for high voltage applications and suitable for switch control of high voltage power supply and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | 1500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF8N90C-VB MOSFET Detailed Parameter Description
1. **Package Type**: TO220F
- The TO220F package provides excellent heat dissipation and is suitable for use in high voltage and medium power applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of switching and power conversion applications, providing good conduction characteristics.
3. **Drain-Source Voltage (VDS)**: 900V
- The maximum drain-source voltage is 900V, suitable for switching and power management applications in high voltage environments.
4. **Gate-Source Voltage (VGS)**: ±30V
- Supports gate voltages of ±30V, ensuring flexibility and stability under different operating conditions.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, indicating that the MOSFET starts to conduct at this voltage, ensuring effective switching control.
6. **On-Resistance (RDS(ON)@VGS=10V)**: 1500mΩ
- The on-resistance is 1500mΩ, which is suitable for high-voltage applications that handle medium currents and provides reasonable switching efficiency.
7. **Drain Current (ID)**: 5A
- The maximum drain current is 5A, which is suitable for applications with medium power current requirements.
8. **Technology Type**: SJ_Multi-EPI
- SJ_Multi-EPI technology provides high withstand voltage and good switching performance, suitable for power management in high-voltage applications.
1. **Package Type**: TO220F
- The TO220F package provides excellent heat dissipation and is suitable for use in high voltage and medium power applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of switching and power conversion applications, providing good conduction characteristics.
3. **Drain-Source Voltage (VDS)**: 900V
- The maximum drain-source voltage is 900V, suitable for switching and power management applications in high voltage environments.
4. **Gate-Source Voltage (VGS)**: ±30V
- Supports gate voltages of ±30V, ensuring flexibility and stability under different operating conditions.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, indicating that the MOSFET starts to conduct at this voltage, ensuring effective switching control.
6. **On-Resistance (RDS(ON)@VGS=10V)**: 1500mΩ
- The on-resistance is 1500mΩ, which is suitable for high-voltage applications that handle medium currents and provides reasonable switching efficiency.
7. **Drain Current (ID)**: 5A
- The maximum drain current is 5A, which is suitable for applications with medium power current requirements.
8. **Technology Type**: SJ_Multi-EPI
- SJ_Multi-EPI technology provides high withstand voltage and good switching performance, suitable for power management in high-voltage applications.
Domain and module applications：
FQPF8N90C-VB MOSFET Application Fields and Module Examples
The high voltage tolerance and medium current handling capability of FQPF8N90C-VB MOSFET make it widely used in multiple fields and modules:
1. **High Voltage Power Switch**:
- In high voltage power switch applications, FQPF8N90C-VB can handle voltages up to 900V, suitable for switch control in high voltage power systems, ensuring the stability and reliability of power systems.
2. **Power Converter**:
- Suitable for various power conversion modules such as DC-DC converters and AC-DC adapters, especially in situations where high voltage handling is required to achieve efficient power conversion.
3. **Inverter**:
- In the inverter of the photovoltaic system, this MOSFET can work stably under high voltage conditions, ensuring high efficiency and reliability in the DC to AC conversion process.
4. **High Voltage Driver**:
- For high voltage drive circuits, such as driving high voltage loads or motor control modules, this MOSFET provides stable switching characteristics and current control.
5. **Power Amplifier**:
- In high voltage power amplifier applications, such as high frequency RF amplifiers, the FQPF8N90C-VB can provide stable switching control and high voltage handling capabilities.
These application examples demonstrate the important role of the FQPF8N90C-VB MOSFET in high voltage environments, especially its potential in power electronic modules that require high withstand voltage and reliability.
The high voltage tolerance and medium current handling capability of FQPF8N90C-VB MOSFET make it widely used in multiple fields and modules:
1. **High Voltage Power Switch**:
- In high voltage power switch applications, FQPF8N90C-VB can handle voltages up to 900V, suitable for switch control in high voltage power systems, ensuring the stability and reliability of power systems.
2. **Power Converter**:
- Suitable for various power conversion modules such as DC-DC converters and AC-DC adapters, especially in situations where high voltage handling is required to achieve efficient power conversion.
3. **Inverter**:
- In the inverter of the photovoltaic system, this MOSFET can work stably under high voltage conditions, ensuring high efficiency and reliability in the DC to AC conversion process.
4. **High Voltage Driver**:
- For high voltage drive circuits, such as driving high voltage loads or motor control modules, this MOSFET provides stable switching characteristics and current control.
5. **Power Amplifier**:
- In high voltage power amplifier applications, such as high frequency RF amplifiers, the FQPF8N90C-VB can provide stable switching control and high voltage handling capabilities.
These application examples demonstrate the important role of the FQPF8N90C-VB MOSFET in high voltage environments, especially its potential in power electronic modules that require high withstand voltage and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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