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FQPF8N80C-VB Product details
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1. FQPF8N80C-VB Product Introduction
FQPF8N80C-VB is a single-channel N-type power MOSFET in TO220F package, designed for high-voltage applications. The device adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, with excellent electrical performance and reliable switching characteristics. Its maximum drain-source voltage (VDS) reaches 800V, which is suitable for applications such as high-voltage power management, lighting control, and industrial drives. The gate-source voltage (VGS) of FQPF8N80C-VB is rated at ±30V and supports drain currents up to 5A, making it an excellent performer in the field of medium and high power conversion and control.
FQPF8N80C-VB is a single-channel N-type power MOSFET in TO220F package, designed for high-voltage applications. The device adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, with excellent electrical performance and reliable switching characteristics. Its maximum drain-source voltage (VDS) reaches 800V, which is suitable for applications such as high-voltage power management, lighting control, and industrial drives. The gate-source voltage (VGS) of FQPF8N80C-VB is rated at ±30V and supports drain currents up to 5A, making it an excellent performer in the field of medium and high power conversion and control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description of FQPF8N80C-VB
1. **Package type**: TO220F
- Provides good thermal management and heat dissipation performance, suitable for use in high power density applications.
2. **Configuration**: Single-channel N-type MOSFET
- Suitable for high voltage and high current switching operations, suitable for single use or integration in more complex circuits.
3. **Drain-source voltage (VDS)**: 800V
- Able to operate in high voltage environments, suitable for power conversion, motor control and other high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a wider range of gate drive voltages, improving the control of switching characteristics.
5. **Threshold voltage (Vth)**: 3.5V
- Lower gate turn-on voltage, easy to design drive circuits.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- With lower on-resistance, it reduces power loss during switching and improves efficiency.
7. **Drain current (ID)**: 5A
- Supports drain current up to 5A, suitable for medium and high power applications.
8. **Technology**: Superjunction (SJ) Multi-EPI
- Using advanced superjunction multi-epitaxial technology, it can effectively reduce conduction loss and improve electrical performance under high voltage operation.
1. **Package type**: TO220F
- Provides good thermal management and heat dissipation performance, suitable for use in high power density applications.
2. **Configuration**: Single-channel N-type MOSFET
- Suitable for high voltage and high current switching operations, suitable for single use or integration in more complex circuits.
3. **Drain-source voltage (VDS)**: 800V
- Able to operate in high voltage environments, suitable for power conversion, motor control and other high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a wider range of gate drive voltages, improving the control of switching characteristics.
5. **Threshold voltage (Vth)**: 3.5V
- Lower gate turn-on voltage, easy to design drive circuits.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- With lower on-resistance, it reduces power loss during switching and improves efficiency.
7. **Drain current (ID)**: 5A
- Supports drain current up to 5A, suitable for medium and high power applications.
8. **Technology**: Superjunction (SJ) Multi-EPI
- Using advanced superjunction multi-epitaxial technology, it can effectively reduce conduction loss and improve electrical performance under high voltage operation.
Domain and module applications：
3. FQPF8N80C-VB Application Fields and Modules
1. **High-voltage Power Management**:
FQPF8N80C-VB performs well in high-voltage power management applications, such as switching power supplies (SMPS), power adapters, and power converters. Its high withstand voltage and low on-resistance characteristics ensure efficient energy transmission and stable power management, and are particularly suitable for use in power modules that require high reliability and high efficiency.
2. **Lighting Control System**:
This MOSFET can be used in high-voltage LED lighting control systems as part of the drive circuit. Its high voltage and high efficiency characteristics enable it to provide stable lighting control in harsh environments, effectively extending the service life of LED equipment.
3. **Industrial Drive Module**:
FQPF8N80C-VB is suitable for industrial drive modules, including inverters, programmable logic controllers (PLCs), and motor drives. Its high voltage handling capability and powerful switching performance enable it to cope with complex industrial applications and ensure efficient operation of equipment.
4. **Motor control applications**:
In motor control systems, the FQPF8N80C-VB can be used as a key switching device for inverters or DC motor drivers. Its high withstand voltage and fast switching characteristics make it suitable for controlling medium and high power motors, ensuring the safety and reliability of the system.
These characteristics make the FQPF8N80C-VB widely used in applications that require efficient power transmission and high voltage operation, and it is a MOSFET device with important significance in many fields.
1. **High-voltage Power Management**:
FQPF8N80C-VB performs well in high-voltage power management applications, such as switching power supplies (SMPS), power adapters, and power converters. Its high withstand voltage and low on-resistance characteristics ensure efficient energy transmission and stable power management, and are particularly suitable for use in power modules that require high reliability and high efficiency.
2. **Lighting Control System**:
This MOSFET can be used in high-voltage LED lighting control systems as part of the drive circuit. Its high voltage and high efficiency characteristics enable it to provide stable lighting control in harsh environments, effectively extending the service life of LED equipment.
3. **Industrial Drive Module**:
FQPF8N80C-VB is suitable for industrial drive modules, including inverters, programmable logic controllers (PLCs), and motor drives. Its high voltage handling capability and powerful switching performance enable it to cope with complex industrial applications and ensure efficient operation of equipment.
4. **Motor control applications**:
In motor control systems, the FQPF8N80C-VB can be used as a key switching device for inverters or DC motor drivers. Its high withstand voltage and fast switching characteristics make it suitable for controlling medium and high power motors, ensuring the safety and reliability of the system.
These characteristics make the FQPF8N80C-VB widely used in applications that require efficient power transmission and high voltage operation, and it is a MOSFET device with important significance in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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