FQPF8N60C-VB Product details
Product introduction:
The FQPF8N60C-VB is a high voltage N-channel power MOSFET in a TO220F package manufactured using Plannar technology. It is designed to withstand higher voltages and provide reliable switching performance in high voltage applications. The MOSFET is capable of withstanding drain-source voltages up to 650V and has low on-resistance and good drain current capability, enabling it to perform well in high voltage environments. The FQPF8N60C-VB is particularly suitable for scenarios requiring high voltage resistance and high efficiency in high voltage power conversion and power management systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: Plannar
Domain and module applications:
The high voltage tolerance and good switching characteristics of FQPF8N60C-VB make it very useful in the following fields and modules:
1. **High voltage power converter**: In high voltage power converter, FQPF8N60C-VB can stably handle voltages up to 650V. Its low on-resistance and high withstand voltage ensure the stability and conversion efficiency of high voltage power supply, which is very suitable for AC-DC converter and high voltage DC-DC converter.
2. **Switching power supply**: In high voltage switching power supply module, this MOSFET can effectively control the power switching operation. Its excellent switching characteristics and high voltage withstand capability make it suitable for various power management applications such as power adapter and high voltage power supply module.
3. **Motor drive system**: FQPF8N60C-VB is suitable for use in high voltage motor drive system, especially in motor drive circuits that require high voltage switch control. Its high voltage withstand capability and low on-resistance ensure stability and efficiency of motor control.
4. **Inverter**: In high voltage inverters, such as solar inverters or other high voltage inverter applications, FQPF8N60C-VB can be used as a switching element to provide stable switching control. Its high voltage withstand capability enables it to efficiently convert power in the inverter.
5. **High Voltage Power Amplifier**: In high voltage power amplifier applications, this MOSFET can withstand high voltage and provide reliable switching performance. It is suitable for high power amplifiers and other high voltage power management modules.
Through these application examples, FQPF8N60C-VB shows its importance in high voltage environments, providing efficient and reliable switching solutions for a variety of electronic designs and systems that require high voltage operation.
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