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FQPF7P06-VB Product details
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Product Introduction: FQPF7P06-VB
FQPF7P06-VB is a high-performance P-type MOSFET in TO220F package. Its drain-source voltage (VDS) is -60V, gate-source voltage (VGS) is ±20V, and turn-on voltage (Vth) is -1.7V. The on-resistance (RDS(ON)) of the device is 120mΩ at VGS=4.5V, 100mΩ at VGS=10V, and the maximum drain current (ID) is -20A. FQPF7P06-VB adopts Trench technology to provide low on-resistance and efficient switching performance, suitable for a variety of applications requiring high current and high reliability.
FQPF7P06-VB is a high-performance P-type MOSFET in TO220F package. Its drain-source voltage (VDS) is -60V, gate-source voltage (VGS) is ±20V, and turn-on voltage (Vth) is -1.7V. The on-resistance (RDS(ON)) of the device is 120mΩ at VGS=4.5V, 100mΩ at VGS=10V, and the maximum drain current (ID) is -20A. FQPF7P06-VB adopts Trench technology to provide low on-resistance and efficient switching performance, suitable for a variety of applications requiring high current and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description:
- **Package type**: TO220F
- **Polarity configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: -20A
- **Technology type**: Trench
- **Package shape**: TO220F package, with good thermal management performance.
- **Package type**: TO220F
- **Polarity configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: -20A
- **Technology type**: Trench
- **Package shape**: TO220F package, with good thermal management performance.
Domain and module applications：
Applications and module examples:
1. **DC Motor Drive**: FQPF7P06-VB performs well in DC motor drive applications. Its P-type structure allows it to control load current under high voltage conditions, and is particularly suitable for the implementation of reverse switching. Its low on-resistance ensures high efficiency and reduces heat loss.
2. **Power Management System**: This MOSFET can be used for efficient power switching and protection circuits in power management systems. Its high current handling capability and low on-resistance enable it to effectively manage high-power loads and provide overcurrent protection functions to ensure system stability and safety.
3. **Automotive Electronics Application**: FQPF7P06-VB is suitable for battery switching and load control in automotive electronics. Due to its high reliability and stability in high temperature environments, the device can be used to control the flow of power in systems such as power windows and power seats.
4. **Renewable Energy Systems**: In solar inverters and wind power generation systems, FQPF7P06-VB can be used to manage the conversion and distribution of electrical energy. Its P-type characteristics help achieve efficient power conversion in these systems, reducing power losses and increasing the overall efficiency of the system.
1. **DC Motor Drive**: FQPF7P06-VB performs well in DC motor drive applications. Its P-type structure allows it to control load current under high voltage conditions, and is particularly suitable for the implementation of reverse switching. Its low on-resistance ensures high efficiency and reduces heat loss.
2. **Power Management System**: This MOSFET can be used for efficient power switching and protection circuits in power management systems. Its high current handling capability and low on-resistance enable it to effectively manage high-power loads and provide overcurrent protection functions to ensure system stability and safety.
3. **Automotive Electronics Application**: FQPF7P06-VB is suitable for battery switching and load control in automotive electronics. Due to its high reliability and stability in high temperature environments, the device can be used to control the flow of power in systems such as power windows and power seats.
4. **Renewable Energy Systems**: In solar inverters and wind power generation systems, FQPF7P06-VB can be used to manage the conversion and distribution of electrical energy. Its P-type characteristics help achieve efficient power conversion in these systems, reducing power losses and increasing the overall efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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