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FQPF7N80C-VB Product details

Product introduction:

1. FQPF7N80C-VB MOSFET Product Introduction

FQPF7N80C-VB is a high-voltage single N-channel power MOSFET in TO220F package, designed for high voltage applications. Its drain-source voltage (VDS) is up to 800V and the gate-source voltage (VGS) is ±30V, which is suitable for applications that need to handle high voltage. The threshold voltage (Vth) is 3.5V, ensuring effective conduction at the appropriate gate voltage. The on-resistance (RDS(ON)) of FQPF7N80C-VB is 1100mΩ@VGS=10V, supporting a drain current of up to 5A. Based on SJ_Multi-EPI technology, this MOSFET provides excellent switching performance and reliability at high voltage, and is particularly suitable for high-voltage switching power supplies, power conversion and power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 800V 3.5V 5A 1100mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 800V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 800V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. FQPF7N80C-VB MOSFET Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Maximum power dissipation**: 75W
- **Junction temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 3000pF
- **Reverse recovery time (trr)**: 350ns

Domain and module applications:

3. FQPF7N80C-VB MOSFET Applications and Module Examples

1. **High-voltage Switching Power Supply (SMPS)**: The FQPF7N80C-VB is ideally suited for use in high-voltage switching power supplies. Its high withstand voltage capability enables it to handle high voltage inputs, while its relatively low on-resistance ensures high efficiency in power conversion. This makes it an ideal choice for industrial power supplies, high-voltage power adapters, and power supplies for communications equipment.

2. **Power Inverter**: In power inverter applications such as solar inverters and uninterruptible power supplies (UPS), the FQPF7N80C-VB is able to effectively handle high voltage and high power loads. Its excellent switching performance and high withstand voltage characteristics ensure system stability and high efficiency.

3. **Motor Control**: Despite its maximum drain current of 5A, the FQPF7N80C-VB also performs well in motor control applications that require high voltage handling. Its high withstand voltage capability makes it suitable for high voltage motor switching and control applications, such as industrial motor control systems and high voltage fan drives.

4. **High Voltage Lighting Systems**: The FQPF7N80C-VB is also suitable for high voltage lighting control systems, such as power supply control for high pressure sodium lamps and xenon lamps. Its high voltage handling capability and reliable switching characteristics ensure stable operation and high efficiency of lighting systems.

5. **Power Management and Protection Circuits**: In high voltage power management systems, the FQPF7N80C-VB provides excellent switching performance and durability, and is suitable for use in power converters, regulators, and power protection circuits to ensure safe operation of equipment.

These application examples demonstrate the wide applicability of the FQPF7N80C-VB MOSFET in the field of high voltage handling and power management, especially in environments where high efficiency and high reliability are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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