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FQPF7N60B-VB Product details
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FQPF7N60B-VB MOSFET Product Introduction
FQPF7N60B-VB is a high voltage N-channel power MOSFET in TO220F package. The device has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) range of ±30V. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)@VGS=10V) is 830mΩ, and the maximum drain current (ID) is 10A. FQPF7N60B-VB uses planar technology and is designed for high voltage applications. It is suitable for power electronic systems that require high voltage resistance and medium current handling capabilities.
FQPF7N60B-VB is a high voltage N-channel power MOSFET in TO220F package. The device has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) range of ±30V. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)@VGS=10V) is 830mΩ, and the maximum drain current (ID) is 10A. FQPF7N60B-VB uses planar technology and is designed for high voltage applications. It is suitable for power electronic systems that require high voltage resistance and medium current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF7N60B-VB MOSFET Detailed parameter description
1. **Package type**: TO220F
- This package provides good heat dissipation performance while ensuring the stability of the device under high-voltage working environment.
2. **Configuration**: Single N-channel
- The single N-channel configuration is conducive to fast and efficient switching characteristics, suitable for a variety of high-voltage applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, ensuring that the device can work stably in high-voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports gate drive voltage of ±30V, allowing a wide range of gate voltage operation, ensuring flexibility in different applications.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage is 3.5V, which means that the MOSFET starts to conduct when this voltage is reached.
6. **On-resistance (RDS(ON)@VGS=10V)**: 830mΩ
- The on-resistance is 830mΩ, which provides good switching efficiency and thermal management requirements for medium power applications.
7. **Drain current (ID)**: 10A
- The maximum drain current is 10A, which is suitable for handling medium power current requirements.
8. **Technology type**: Plannar
- The planar technology design provides stable high voltage handling capabilities, and despite the higher on-resistance, it has good reliability in high voltage environments.
1. **Package type**: TO220F
- This package provides good heat dissipation performance while ensuring the stability of the device under high-voltage working environment.
2. **Configuration**: Single N-channel
- The single N-channel configuration is conducive to fast and efficient switching characteristics, suitable for a variety of high-voltage applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, ensuring that the device can work stably in high-voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports gate drive voltage of ±30V, allowing a wide range of gate voltage operation, ensuring flexibility in different applications.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage is 3.5V, which means that the MOSFET starts to conduct when this voltage is reached.
6. **On-resistance (RDS(ON)@VGS=10V)**: 830mΩ
- The on-resistance is 830mΩ, which provides good switching efficiency and thermal management requirements for medium power applications.
7. **Drain current (ID)**: 10A
- The maximum drain current is 10A, which is suitable for handling medium power current requirements.
8. **Technology type**: Plannar
- The planar technology design provides stable high voltage handling capabilities, and despite the higher on-resistance, it has good reliability in high voltage environments.
Domain and module applications：
FQPF7N60B-VB MOSFET Application Fields and Module Examples
The high voltage tolerance and high current handling capability of FQPF7N60B-VB MOSFET make it suitable for the following fields and modules:
1. **Switching Mode Power Supply (SMPS)**:
- Suitable for high voltage power switches in switching mode power supplies (SMPS), it can effectively handle high voltages of 650V and provide stable current control to ensure high efficiency and reliability of the power supply.
2. **Lighting Power Supply**:
- This MOSFET can be used in LED drivers and other lighting power modules, it can stably handle high voltage inputs and provide reliable current management, suitable for industrial and household lighting applications.
3. **Inverter**:
- In inverter circuits, especially inverters for photovoltaic systems, FQPF7N60B-VB MOSFET can operate stably under high voltage conditions to ensure high efficiency of DC to AC conversion.
4. **Motor Driver**:
- This MOSFET is suitable for motor driver modules, especially in industrial motor control applications that require high voltage handling capabilities, and can provide stable current switching characteristics.
5. **Power Converter**:
- Suitable for high voltage DC-DC converters and AC-DC power adapters, the FQPF7N60B-VB can effectively handle high voltages and ensure efficient conversion of circuits.
These application examples show the important role of the FQPF7N60B-VB MOSFET in high voltage environments, especially in power electronic modules that require reliability and efficient current management.
The high voltage tolerance and high current handling capability of FQPF7N60B-VB MOSFET make it suitable for the following fields and modules:
1. **Switching Mode Power Supply (SMPS)**:
- Suitable for high voltage power switches in switching mode power supplies (SMPS), it can effectively handle high voltages of 650V and provide stable current control to ensure high efficiency and reliability of the power supply.
2. **Lighting Power Supply**:
- This MOSFET can be used in LED drivers and other lighting power modules, it can stably handle high voltage inputs and provide reliable current management, suitable for industrial and household lighting applications.
3. **Inverter**:
- In inverter circuits, especially inverters for photovoltaic systems, FQPF7N60B-VB MOSFET can operate stably under high voltage conditions to ensure high efficiency of DC to AC conversion.
4. **Motor Driver**:
- This MOSFET is suitable for motor driver modules, especially in industrial motor control applications that require high voltage handling capabilities, and can provide stable current switching characteristics.
5. **Power Converter**:
- Suitable for high voltage DC-DC converters and AC-DC power adapters, the FQPF7N60B-VB can effectively handle high voltages and ensure efficient conversion of circuits.
These application examples show the important role of the FQPF7N60B-VB MOSFET in high voltage environments, especially in power electronic modules that require reliability and efficient current management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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