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FQPF6N90C-VB Product details
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1. FQPF6N90C-VB Product Introduction
FQPF6N90C-VB is a single-channel N-type power MOSFET in TO220F package with excellent electrical performance and high voltage resistance. Its design adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, which can provide stable switching characteristics under high voltage environment. The device has a drain-source voltage (VDS) of up to 900V and a gate-source voltage (VGS) of ±30V, which is suitable for high-voltage switching applications such as power management, motor control and industrial drive systems.
FQPF6N90C-VB is a single-channel N-type power MOSFET in TO220F package with excellent electrical performance and high voltage resistance. Its design adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, which can provide stable switching characteristics under high voltage environment. The device has a drain-source voltage (VDS) of up to 900V and a gate-source voltage (VGS) of ±30V, which is suitable for high-voltage switching applications such as power management, motor control and industrial drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | 1500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of FQPF6N90C-VB
1. **Package type**: TO220F
- This package provides good thermal management characteristics and is suitable for applications that require high heat dissipation capabilities.
2. **Configuration**: Single-channel N-type MOSFET
- Suitable for high-voltage, high-current switching applications.
3. **Drain-source voltage (VDS)**: 900V
- Able to operate in high-voltage environments, suitable for power transmission and power conversion equipment.
4. **Gate-source voltage (VGS)**: ±30V
- Supports gate drive voltages up to ±30V, providing better switching control.
5. **Threshold voltage (Vth)**: 3.5V
- Provides a lower gate turn-on voltage, making it easy to control and drive.
6. **On-resistance (RDS(ON))**: 1500mΩ @ VGS = 10V
- With a low on-resistance of 1500mΩ, it helps reduce switching losses.
7. **Drain current (ID)**: 5A
- Supports up to 5A of drain current, enabling it to handle medium power loads.
8. **Technology**: Superjunction (SJ) Multi-EPI
- This technology has efficient current handling capabilities in high-voltage applications, reduces conduction losses, and improves device reliability.
1. **Package type**: TO220F
- This package provides good thermal management characteristics and is suitable for applications that require high heat dissipation capabilities.
2. **Configuration**: Single-channel N-type MOSFET
- Suitable for high-voltage, high-current switching applications.
3. **Drain-source voltage (VDS)**: 900V
- Able to operate in high-voltage environments, suitable for power transmission and power conversion equipment.
4. **Gate-source voltage (VGS)**: ±30V
- Supports gate drive voltages up to ±30V, providing better switching control.
5. **Threshold voltage (Vth)**: 3.5V
- Provides a lower gate turn-on voltage, making it easy to control and drive.
6. **On-resistance (RDS(ON))**: 1500mΩ @ VGS = 10V
- With a low on-resistance of 1500mΩ, it helps reduce switching losses.
7. **Drain current (ID)**: 5A
- Supports up to 5A of drain current, enabling it to handle medium power loads.
8. **Technology**: Superjunction (SJ) Multi-EPI
- This technology has efficient current handling capabilities in high-voltage applications, reduces conduction losses, and improves device reliability.
Domain and module applications：
3. FQPF6N90C-VB Application Fields and Modules
1. **Power Management Module**:
FQPF6N90C-VB is very suitable for power management modules, especially in switch mode power supplies (SMPS). Due to its high withstand voltage and low on-resistance characteristics, this MOSFET can provide efficient energy transfer and lower losses in high voltage conversion, thereby improving the overall efficiency of the system.
2. **Motor Control System**:
In motor control systems, FQPF6N90C-VB can be used as a switching device for inverters or DC motor drivers. Its high drain voltage and fast switching capability enable it to cope with the transient high voltage generated during motor start and stop, ensuring the safety and stability of the system.
3. **Industrial Drive Module**:
This MOSFET is suitable for industrial drive modules such as programmable logic controllers (PLCs) and inverters. Its high withstand voltage characteristics enable it to work in complex industrial environments and handle high voltage and high current industrial equipment.
4. **Lighting system**:
FQPF6N90C-VB can also be used in high-voltage LED lighting systems as part of the drive circuit. Its efficient switching characteristics can work stably under high voltage, extend the service life of the LED, and improve the energy efficiency of the lighting system.
These characteristics make FQPF6N90C-VB an ideal choice for high-voltage, low-loss applications, and are widely used in various fields that require efficient power conversion and control.
1. **Power Management Module**:
FQPF6N90C-VB is very suitable for power management modules, especially in switch mode power supplies (SMPS). Due to its high withstand voltage and low on-resistance characteristics, this MOSFET can provide efficient energy transfer and lower losses in high voltage conversion, thereby improving the overall efficiency of the system.
2. **Motor Control System**:
In motor control systems, FQPF6N90C-VB can be used as a switching device for inverters or DC motor drivers. Its high drain voltage and fast switching capability enable it to cope with the transient high voltage generated during motor start and stop, ensuring the safety and stability of the system.
3. **Industrial Drive Module**:
This MOSFET is suitable for industrial drive modules such as programmable logic controllers (PLCs) and inverters. Its high withstand voltage characteristics enable it to work in complex industrial environments and handle high voltage and high current industrial equipment.
4. **Lighting system**:
FQPF6N90C-VB can also be used in high-voltage LED lighting systems as part of the drive circuit. Its efficient switching characteristics can work stably under high voltage, extend the service life of the LED, and improve the energy efficiency of the lighting system.
These characteristics make FQPF6N90C-VB an ideal choice for high-voltage, low-loss applications, and are widely used in various fields that require efficient power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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