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FQPF6N80-VB Product details
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FQPF6N80-VB Product Introduction
FQPF6N80-VB is a high voltage N-channel power MOSFET in TO-220F package. This MOSFET is designed to withstand drain-source voltage up to 800V, making it suitable for high voltage applications. It uses SJ_Multi-EPI technology, which improves the voltage resistance and switching performance of MOSFET by multiple epitaxial growth on semiconductor materials. Although its on-resistance is high (1100mΩ) and drain current is 5A. FQPF6N80-VB is designed for applications requiring high voltage and high reliability, and is suitable for stable operation in high voltage environments.
FQPF6N80-VB is a high voltage N-channel power MOSFET in TO-220F package. This MOSFET is designed to withstand drain-source voltage up to 800V, making it suitable for high voltage applications. It uses SJ_Multi-EPI technology, which improves the voltage resistance and switching performance of MOSFET by multiple epitaxial growth on semiconductor materials. Although its on-resistance is high (1100mΩ) and drain current is 5A. FQPF6N80-VB is designed for applications requiring high voltage and high reliability, and is suitable for stable operation in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF6N80-VB Detailed parameter description
- **Package type**: TO-220F
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 800V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multiple epitaxial technology)
- **Package type**: TO-220F
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 800V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multiple epitaxial technology)
Domain and module applications：
Application fields and module examples
FQPF6N80-VB is suitable for multiple high voltage application fields and modules due to its high withstand voltage characteristics and stability:
1. **High voltage switch**: FQPF6N80-VB performs well in high voltage switch applications and can handle voltages up to 800V, making it suitable for high voltage power switches and switch control in power electronic equipment.
2. **Power protection**: In the power protection circuit, this MOSFET can effectively protect the circuit from excessive voltage. Its high withstand voltage capability ensures that the circuit can operate safely under abnormal conditions and prevents other components from being damaged.
3. **Motor drive**: Suitable for high voltage motor drive applications, FQPF6N80-VB can work stably in a high voltage environment. Although its on-resistance is high, it can still meet the requirements of high voltage motor drive.
4. **High-voltage converter**: In high-voltage converters, FQPF6N80-VB can efficiently handle high-voltage conversion tasks. Despite the high on-resistance, its high withstand voltage characteristics make it suitable for converters and power systems that require high voltage handling.
With its excellent withstand voltage capability and stability, FQPF6N80-VB provides a reliable power switch solution for various high-voltage applications.
FQPF6N80-VB is suitable for multiple high voltage application fields and modules due to its high withstand voltage characteristics and stability:
1. **High voltage switch**: FQPF6N80-VB performs well in high voltage switch applications and can handle voltages up to 800V, making it suitable for high voltage power switches and switch control in power electronic equipment.
2. **Power protection**: In the power protection circuit, this MOSFET can effectively protect the circuit from excessive voltage. Its high withstand voltage capability ensures that the circuit can operate safely under abnormal conditions and prevents other components from being damaged.
3. **Motor drive**: Suitable for high voltage motor drive applications, FQPF6N80-VB can work stably in a high voltage environment. Although its on-resistance is high, it can still meet the requirements of high voltage motor drive.
4. **High-voltage converter**: In high-voltage converters, FQPF6N80-VB can efficiently handle high-voltage conversion tasks. Despite the high on-resistance, its high withstand voltage characteristics make it suitable for converters and power systems that require high voltage handling.
With its excellent withstand voltage capability and stability, FQPF6N80-VB provides a reliable power switch solution for various high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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