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FQPF6N80T-VB Product details
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1. FQPF6N80T-VB MOSFET Product Introduction
FQPF6N80T-VB is a high-voltage single N-channel power MOSFET packaged in TO220F, designed for high voltage applications. Its drain-source voltage (VDS) is as high as 800V and the gate-source voltage (VGS) is ±30V, making it suitable for applications that need to handle high voltages. The threshold voltage (Vth) of this MOSFET is 3.5V, which ensures effective conduction under appropriate gate voltage. The on-resistance (RDS(ON)) of FQPF6N80T-VB is 1100mΩ@VGS=10V, supporting a drain current of up to 5A. Using SJ_Multi-EPI technology, this MOSFET has excellent switching performance and reliability at high voltages, and is suitable for high voltage switching and power management applications.
FQPF6N80T-VB is a high-voltage single N-channel power MOSFET packaged in TO220F, designed for high voltage applications. Its drain-source voltage (VDS) is as high as 800V and the gate-source voltage (VGS) is ±30V, making it suitable for applications that need to handle high voltages. The threshold voltage (Vth) of this MOSFET is 3.5V, which ensures effective conduction under appropriate gate voltage. The on-resistance (RDS(ON)) of FQPF6N80T-VB is 1100mΩ@VGS=10V, supporting a drain current of up to 5A. Using SJ_Multi-EPI technology, this MOSFET has excellent switching performance and reliability at high voltages, and is suitable for high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FQPF6N80T-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Power consumption**: 75W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: Suitable for medium and low frequency applications
- **Input capacitance (Ciss)**: 3000pF
- **Reverse recovery time (trr)**: 350ns
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Power consumption**: 75W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: Suitable for medium and low frequency applications
- **Input capacitance (Ciss)**: 3000pF
- **Reverse recovery time (trr)**: 350ns
Domain and module applications：
3. FQPF6N80T-VB MOSFET Applications and Module Examples
1. **High Voltage Switching Power Supply (SMPS)**: The FQPF6N80T-VB is ideal for use in high voltage switching power supplies. Its high withstand voltage capability enables it to handle high voltage inputs, while its on-resistance and power handling capabilities ensure efficient power conversion, making it suitable for industrial power supplies and high voltage power adapters.
2. **Power Inverter**: In power inverter applications, such as solar inverters and uninterruptible power supply (UPS) systems, the FQPF6N80T-VB is able to handle high voltage and high power loads. Its high withstand voltage characteristics and relatively low on-resistance ensure system stability and high efficiency.
3. **Motor Control**: Despite its maximum drain current of 5A, the FQPF6N80T-VB is still suitable for high voltage motor control systems. Its high voltage withstand capability makes it suitable for motor switching and control applications in high voltage environments.
4. **High-voltage power management systems**: In various power management systems, especially those that require high-voltage protection and control, the FQPF6N80T-VB provides stable switching performance. Its high voltage capability and switching performance make it suitable for power management and protection circuits.
5. **High-voltage lighting systems**: The FQPF6N80T-VB is also suitable for high-voltage lighting systems, such as high-pressure sodium and xenon lamp control. It is able to handle high-voltage loads and provide reliable switching control, ensuring efficient operation of lighting systems.
These application examples demonstrate the wide applicability of the FQPF6N80T-VB MOSFET in high-voltage and power management applications, especially where high voltage tolerance and high efficiency are required.
1. **High Voltage Switching Power Supply (SMPS)**: The FQPF6N80T-VB is ideal for use in high voltage switching power supplies. Its high withstand voltage capability enables it to handle high voltage inputs, while its on-resistance and power handling capabilities ensure efficient power conversion, making it suitable for industrial power supplies and high voltage power adapters.
2. **Power Inverter**: In power inverter applications, such as solar inverters and uninterruptible power supply (UPS) systems, the FQPF6N80T-VB is able to handle high voltage and high power loads. Its high withstand voltage characteristics and relatively low on-resistance ensure system stability and high efficiency.
3. **Motor Control**: Despite its maximum drain current of 5A, the FQPF6N80T-VB is still suitable for high voltage motor control systems. Its high voltage withstand capability makes it suitable for motor switching and control applications in high voltage environments.
4. **High-voltage power management systems**: In various power management systems, especially those that require high-voltage protection and control, the FQPF6N80T-VB provides stable switching performance. Its high voltage capability and switching performance make it suitable for power management and protection circuits.
5. **High-voltage lighting systems**: The FQPF6N80T-VB is also suitable for high-voltage lighting systems, such as high-pressure sodium and xenon lamp control. It is able to handle high-voltage loads and provide reliable switching control, ensuring efficient operation of lighting systems.
These application examples demonstrate the wide applicability of the FQPF6N80T-VB MOSFET in high-voltage and power management applications, especially where high voltage tolerance and high efficiency are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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