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FQPF6N25-VB Product details
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FQPF6N25-VB MOSFET Product Introduction
The FQPF6N25-VB is an N-channel power MOSFET in a TO220F package and manufactured using Trench technology. Designed for medium voltage applications, this MOSFET is capable of withstanding drain-source voltages up to 250V and has excellent switching characteristics. Its relatively low on-resistance and moderate drain current capability make it suitable for use in a variety of medium voltage applications. The FQPF6N25-VB provides efficient switching performance and is suitable for power management and control systems that require medium voltage processing.
The FQPF6N25-VB is an N-channel power MOSFET in a TO220F package and manufactured using Trench technology. Designed for medium voltage applications, this MOSFET is capable of withstanding drain-source voltages up to 250V and has excellent switching characteristics. Its relatively low on-resistance and moderate drain current capability make it suitable for use in a variety of medium voltage applications. The FQPF6N25-VB provides efficient switching performance and is suitable for power management and control systems that require medium voltage processing.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Drain current (ID)**: 4.4A
- **Technology type**: Trench
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Drain current (ID)**: 4.4A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples
The design of FQPF6N25-VB makes it widely used in the following fields and modules:
1. **Medium voltage power converter**: Due to its ability to withstand a drain-source voltage of 250V, FQPF6N25-VB is an ideal choice for medium voltage power converters. It can provide stable switching operation in a medium voltage environment, enhancing the efficiency and reliability of power conversion.
2. **Switching power supply**: In a switching power supply module, this MOSFET can effectively handle medium voltage switching tasks. Its moderate on-resistance and drain current capability make it suitable for efficient switching control of power modules, reducing power consumption and improving system performance.
3. **Motor drive circuit**: FQPF6N25-VB is suitable for motor drive circuits, especially in scenarios dealing with medium voltage motor control. It can provide reliable switching functions to ensure the stability and efficiency of the motor drive system.
4. **Lighting control system**: In lighting control systems, such as LED drive circuits and medium voltage lighting systems, this MOSFET can stably control current and voltage, and is suitable for efficient switching control of various lighting modules.
5. **Power management module**: FQPF6N25-VB is also suitable for power management modules, such as for power management, load switching, and power regulation applications. It is able to provide efficient switching operations to meet the needs of medium voltage power management.
Through these application examples, FQPF6N25-VB shows its importance in medium voltage and medium power applications, providing reliable and efficient switching solutions.
The design of FQPF6N25-VB makes it widely used in the following fields and modules:
1. **Medium voltage power converter**: Due to its ability to withstand a drain-source voltage of 250V, FQPF6N25-VB is an ideal choice for medium voltage power converters. It can provide stable switching operation in a medium voltage environment, enhancing the efficiency and reliability of power conversion.
2. **Switching power supply**: In a switching power supply module, this MOSFET can effectively handle medium voltage switching tasks. Its moderate on-resistance and drain current capability make it suitable for efficient switching control of power modules, reducing power consumption and improving system performance.
3. **Motor drive circuit**: FQPF6N25-VB is suitable for motor drive circuits, especially in scenarios dealing with medium voltage motor control. It can provide reliable switching functions to ensure the stability and efficiency of the motor drive system.
4. **Lighting control system**: In lighting control systems, such as LED drive circuits and medium voltage lighting systems, this MOSFET can stably control current and voltage, and is suitable for efficient switching control of various lighting modules.
5. **Power management module**: FQPF6N25-VB is also suitable for power management modules, such as for power management, load switching, and power regulation applications. It is able to provide efficient switching operations to meet the needs of medium voltage power management.
Through these application examples, FQPF6N25-VB shows its importance in medium voltage and medium power applications, providing reliable and efficient switching solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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