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FQPF6N15-VB Product details
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FQPF6N15-VB Product Introduction
FQPF6N15-VB is a high-performance N-type MOSFET in TO220F package, designed for medium-to-high voltage and high current applications. Using Trench technology, this MOSFET provides excellent switching performance and low on-resistance, making it superior in high current and high voltage environments. Its moderate drain-source voltage and low on-resistance make it particularly suitable for electronic designs that require efficient energy conversion and stable switching operation.
FQPF6N15-VB is a high-performance N-type MOSFET in TO220F package, designed for medium-to-high voltage and high current applications. Using Trench technology, this MOSFET provides excellent switching performance and low on-resistance, making it superior in high current and high voltage environments. Its moderate drain-source voltage and low on-resistance make it particularly suitable for electronic designs that require efficient energy conversion and stable switching operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 58mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Trench technology
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 58mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
1. **Switching power supply**: FQPF6N15-VB can provide efficient switching control in switching power supply applications, and is particularly suitable for power management systems that require high current and medium voltage. Its low on-resistance helps reduce power loss and improve system efficiency.
2. **DC-DC converter**: In DC-DC converters, this MOSFET can be used for voltage conversion and switching operations. Its high current handling capability and low on-resistance ensure efficient energy conversion under high current conditions, suitable for a variety of voltage conversion applications.
3. **Motor driver**: FQPF6N15-VB is also suitable for motor drives to control the start and stop and speed regulation of motors. Its high drain current capability and low on-resistance enable it to stably drive medium and high power motors, suitable for control systems for industrial motors and power tools.
4. **Power amplifier**: In power amplifier circuits, this MOSFET can be used as a switching component to handle high current signals. Its excellent switching performance and low on-resistance enable it to maintain good performance in high current amplifier circuits.
5. **Power Protection Circuit**: FQPF6N15-VB is also suitable for power protection circuits, such as overcurrent protection or overvoltage protection. Its high current handling capability and stable switching characteristics help protect the power system and ensure reliable operation under abnormal conditions.
Through these examples of application areas, it can be seen that the importance of FQPF6N15-VB in high current and medium and high voltage applications, making it a key component for efficient energy conversion and stable switching operation.
1. **Switching power supply**: FQPF6N15-VB can provide efficient switching control in switching power supply applications, and is particularly suitable for power management systems that require high current and medium voltage. Its low on-resistance helps reduce power loss and improve system efficiency.
2. **DC-DC converter**: In DC-DC converters, this MOSFET can be used for voltage conversion and switching operations. Its high current handling capability and low on-resistance ensure efficient energy conversion under high current conditions, suitable for a variety of voltage conversion applications.
3. **Motor driver**: FQPF6N15-VB is also suitable for motor drives to control the start and stop and speed regulation of motors. Its high drain current capability and low on-resistance enable it to stably drive medium and high power motors, suitable for control systems for industrial motors and power tools.
4. **Power amplifier**: In power amplifier circuits, this MOSFET can be used as a switching component to handle high current signals. Its excellent switching performance and low on-resistance enable it to maintain good performance in high current amplifier circuits.
5. **Power Protection Circuit**: FQPF6N15-VB is also suitable for power protection circuits, such as overcurrent protection or overvoltage protection. Its high current handling capability and stable switching characteristics help protect the power system and ensure reliable operation under abnormal conditions.
Through these examples of application areas, it can be seen that the importance of FQPF6N15-VB in high current and medium and high voltage applications, making it a key component for efficient energy conversion and stable switching operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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