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FQPF5P10-VB Product details
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FQPF5P10-VB MOSFET Product Introduction
FQPF5P10-VB is a high-performance P-Channel power MOSFET in a TO220F package, designed for applications requiring high current and medium voltage. The MOSFET has a drain-source voltage (VDS) of -100V, a gate-source voltage (VGS) of ±20V, a threshold voltage (Vth) of -2V, and an on-resistance (RDS(ON)) of 230mΩ at a gate drive of 4.5V and 200mΩ at a gate drive of 10V. It is capable of handling drain currents (ID) of up to -12A and is manufactured using Trench technology for power switching applications requiring high efficiency and reliability.
FQPF5P10-VB is a high-performance P-Channel power MOSFET in a TO220F package, designed for applications requiring high current and medium voltage. The MOSFET has a drain-source voltage (VDS) of -100V, a gate-source voltage (VGS) of ±20V, a threshold voltage (Vth) of -2V, and an on-resistance (RDS(ON)) of 230mΩ at a gate drive of 4.5V and 200mΩ at a gate drive of 10V. It is capable of handling drain currents (ID) of up to -12A and is manufactured using Trench technology for power switching applications requiring high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
- **Model**: FQPF5P10-VB
- **Package type**: TO220F
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 230mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 200mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C ~ 150°C
- **Model**: FQPF5P10-VB
- **Package type**: TO220F
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 230mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 200mΩ @ VGS=10V
- **Drain current (ID)**: -12A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C ~ 150°C
Domain and module applications：
Application fields and module examples
FQPF5P10-VB MOSFET is suitable for the following fields and modules due to its moderate voltage and current handling capabilities:
1. **Power management**: In power management systems, especially power switching applications with high current loads, FQPF5P10-VB can effectively handle load current and provide efficient switching performance, suitable for DC-DC converters and power distribution networks.
2. **Motor drive**: In motor drive applications, such as reverse current switching of DC motors and stepper motors, this MOSFET can be used as an efficient switching element to control the direction and speed of the motor, suitable for scenarios requiring reverse current control.
3. **High power LED drive**: In high power LED drivers, FQPF5P10-VB can control the current of the LED, ensure stable light output, and support efficient power transfer, suitable for high power lighting applications.
4. **Inverters and power converters**: Suitable for use as switching elements in inverters and power converters, this MOSFET can provide stable switching performance and high current handling capabilities at medium voltages, improving system efficiency and stability.
5. **Protection circuits**: In power protection circuits, such as overvoltage protection or overcurrent protection, FQPF5P10-VB can be used as a key switching element to disconnect or regulate current to ensure safe and stable operation of the circuit.
FQPF5P10-VB MOSFET is suitable for the following fields and modules due to its moderate voltage and current handling capabilities:
1. **Power management**: In power management systems, especially power switching applications with high current loads, FQPF5P10-VB can effectively handle load current and provide efficient switching performance, suitable for DC-DC converters and power distribution networks.
2. **Motor drive**: In motor drive applications, such as reverse current switching of DC motors and stepper motors, this MOSFET can be used as an efficient switching element to control the direction and speed of the motor, suitable for scenarios requiring reverse current control.
3. **High power LED drive**: In high power LED drivers, FQPF5P10-VB can control the current of the LED, ensure stable light output, and support efficient power transfer, suitable for high power lighting applications.
4. **Inverters and power converters**: Suitable for use as switching elements in inverters and power converters, this MOSFET can provide stable switching performance and high current handling capabilities at medium voltages, improving system efficiency and stability.
5. **Protection circuits**: In power protection circuits, such as overvoltage protection or overcurrent protection, FQPF5P10-VB can be used as a key switching element to disconnect or regulate current to ensure safe and stable operation of the circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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