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FQPF5N90-VB Product details
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FQPF5N90-VB Product Introduction
FQPF5N90-VB is a high voltage N-channel power MOSFET in TO-220F package. This MOSFET has a drain-source voltage withstand capability of 900V and is suitable for high voltage applications. It uses SJ_Multi-EPI technology, which improves the voltage withstand and switching performance of MOSFET by multiple epitaxial growth on semiconductor materials. Despite its high voltage withstand capability, the FQPF5N90-VB has a high on-resistance (1500mΩ) and a drain current of 5A. The device is designed for electrical circuits that require high voltage withstand and reliability, and is suitable for high voltage switching and protection circuits.
FQPF5N90-VB is a high voltage N-channel power MOSFET in TO-220F package. This MOSFET has a drain-source voltage withstand capability of 900V and is suitable for high voltage applications. It uses SJ_Multi-EPI technology, which improves the voltage withstand and switching performance of MOSFET by multiple epitaxial growth on semiconductor materials. Despite its high voltage withstand capability, the FQPF5N90-VB has a high on-resistance (1500mΩ) and a drain current of 5A. The device is designed for electrical circuits that require high voltage withstand and reliability, and is suitable for high voltage switching and protection circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | 1500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF5N90-VB Detailed parameter description
- **Package type**: TO-220F
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 900V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multiple epitaxial technology)
- **Package type**: TO-220F
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 900V
- **Gate voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multiple epitaxial technology)
Domain and module applications：
Applications and module examples
The high withstand voltage characteristics and stability of FQPF5N90-VB enable it to excel in multiple high voltage applications:
1. **High voltage switch**: In switching applications that need to handle high voltages, FQPF5N90-VB can effectively withstand drain-source voltages up to 900V. Its high withstand voltage characteristics make it suitable for use in high voltage switching circuits, such as high voltage power switches and power electronic equipment.
2. **Power protection circuit**: In power protection applications, this MOSFET can protect the circuit from excessive voltage. Its high withstand voltage characteristics ensure that the circuit can operate safely under abnormal conditions to avoid damage to other components.
3. **Motor drive**: In motor drive systems that need to handle high voltages, FQPF5N90-VB can effectively control the switching and protection of the motor. Despite its high on-resistance, its withstand voltage capability enables it to work reliably in high voltage environments.
4. **High-voltage converter**: In high-voltage converters, FQPF5N90-VB can efficiently handle high voltage conversion processes. Although its on-resistance is relatively high, it is suitable for converters and power systems that require high voltage processing.
With its high voltage resistance and stable performance, FQPF5N90-VB is suitable for high voltage and protection circuit applications, providing a reliable power switch solution for various high-voltage electronic devices.
The high withstand voltage characteristics and stability of FQPF5N90-VB enable it to excel in multiple high voltage applications:
1. **High voltage switch**: In switching applications that need to handle high voltages, FQPF5N90-VB can effectively withstand drain-source voltages up to 900V. Its high withstand voltage characteristics make it suitable for use in high voltage switching circuits, such as high voltage power switches and power electronic equipment.
2. **Power protection circuit**: In power protection applications, this MOSFET can protect the circuit from excessive voltage. Its high withstand voltage characteristics ensure that the circuit can operate safely under abnormal conditions to avoid damage to other components.
3. **Motor drive**: In motor drive systems that need to handle high voltages, FQPF5N90-VB can effectively control the switching and protection of the motor. Despite its high on-resistance, its withstand voltage capability enables it to work reliably in high voltage environments.
4. **High-voltage converter**: In high-voltage converters, FQPF5N90-VB can efficiently handle high voltage conversion processes. Although its on-resistance is relatively high, it is suitable for converters and power systems that require high voltage processing.
With its high voltage resistance and stable performance, FQPF5N90-VB is suitable for high voltage and protection circuit applications, providing a reliable power switch solution for various high-voltage electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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