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FQPF5N50C-VB Product details
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FQPF5N50C-VB MOSFET Product Introduction
FQPF5N50C-VB is a high voltage N-channel power MOSFET in TO220F package. This MOSFET can withstand drain-source voltage (VDS) up to 650V, and gate-source voltage (VGS) range is ±30V. Its turn-on voltage (Vth) is 3.5V, on-resistance (RDS(ON)@VGS=10V) is 1100mΩ, and maximum drain current (ID) is 7A. FQPF5N50C-VB adopts planar technology and is designed for switching and power management applications that require high voltage tolerance, suitable for use in medium power applications.
FQPF5N50C-VB is a high voltage N-channel power MOSFET in TO220F package. This MOSFET can withstand drain-source voltage (VDS) up to 650V, and gate-source voltage (VGS) range is ±30V. Its turn-on voltage (Vth) is 3.5V, on-resistance (RDS(ON)@VGS=10V) is 1100mΩ, and maximum drain current (ID) is 7A. FQPF5N50C-VB adopts planar technology and is designed for switching and power management applications that require high voltage tolerance, suitable for use in medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF5N50C-VB MOSFET Detailed parameter description
1. **Package type**: TO220F
- This package provides excellent heat dissipation and is suitable for use in high voltage and medium power applications.
2. **Configuration**: Single N-channel
- The single N-channel MOSFET design provides stable switching control and is suitable for applications in high voltage environments.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, making it suitable for power switching and power conversion applications that require high voltage tolerance.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate drive voltage of ±30V to ensure the stability of the device under various operating conditions.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage is 3.5V, which means that the MOSFET starts to conduct at this gate voltage.
6. **On-resistance (RDS(ON)@VGS=10V)**: 1100mΩ
- The on-resistance is 1100mΩ, which is suitable for applications requiring medium current, but the conduction loss is relatively high, and attention should be paid to heat dissipation design.
7. **Drain current (ID)**: 7A
- The maximum drain current is 7A, which is suitable for handling medium power current requirements.
8. **Technology type**: Plannar
- Planar technology is used for high voltage applications and provides stable performance, but the on-resistance is higher.
1. **Package type**: TO220F
- This package provides excellent heat dissipation and is suitable for use in high voltage and medium power applications.
2. **Configuration**: Single N-channel
- The single N-channel MOSFET design provides stable switching control and is suitable for applications in high voltage environments.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, making it suitable for power switching and power conversion applications that require high voltage tolerance.
4. **Gate-source voltage (VGS)**: ±30V
- Supports a gate drive voltage of ±30V to ensure the stability of the device under various operating conditions.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage is 3.5V, which means that the MOSFET starts to conduct at this gate voltage.
6. **On-resistance (RDS(ON)@VGS=10V)**: 1100mΩ
- The on-resistance is 1100mΩ, which is suitable for applications requiring medium current, but the conduction loss is relatively high, and attention should be paid to heat dissipation design.
7. **Drain current (ID)**: 7A
- The maximum drain current is 7A, which is suitable for handling medium power current requirements.
8. **Technology type**: Plannar
- Planar technology is used for high voltage applications and provides stable performance, but the on-resistance is higher.
Domain and module applications：
FQPF5N50C-VB MOSFET Application Fields and Module Examples
The high voltage tolerance and moderate current handling capability of the FQPF5N50C-VB MOSFET make it suitable for the following fields and modules:
1. **High Voltage Power Switch**:
- In high voltage power switch applications, this MOSFET is able to handle voltages up to 650V, suitable as a switching element to ensure efficient and stable operation of the power system.
2. **Power Converter**:
- Suitable for various power conversion modules such as DC-DC converters and AC-DC adapters, where high voltage handling capability and reliable switching performance are required.
3. **High Voltage Inverter**:
- In high voltage inverters, such as those used in photovoltaic systems, the FQPF5N50C-VB MOSFET is able to stably handle the conversion of high voltage DC to AC, ensuring efficient and reliable operation of the system.
4. **Power Amplifier**:
- Used in power management of high voltage power amplifiers, capable of handling high voltages and providing stable current control, suitable for applications such as RF and communication equipment.
These application examples demonstrate the important role of the FQPF5N50C-VB MOSFET in high voltage environments, especially its potential for application in high voltage power supplies and power conversion modules.
The high voltage tolerance and moderate current handling capability of the FQPF5N50C-VB MOSFET make it suitable for the following fields and modules:
1. **High Voltage Power Switch**:
- In high voltage power switch applications, this MOSFET is able to handle voltages up to 650V, suitable as a switching element to ensure efficient and stable operation of the power system.
2. **Power Converter**:
- Suitable for various power conversion modules such as DC-DC converters and AC-DC adapters, where high voltage handling capability and reliable switching performance are required.
3. **High Voltage Inverter**:
- In high voltage inverters, such as those used in photovoltaic systems, the FQPF5N50C-VB MOSFET is able to stably handle the conversion of high voltage DC to AC, ensuring efficient and reliable operation of the system.
4. **Power Amplifier**:
- Used in power management of high voltage power amplifiers, capable of handling high voltages and providing stable current control, suitable for applications such as RF and communication equipment.
These application examples demonstrate the important role of the FQPF5N50C-VB MOSFET in high voltage environments, especially its potential for application in high voltage power supplies and power conversion modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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