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FQPF5N15-VB Product details
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FQPF5N15-VB Product Introduction
FQPF5N15-VB is a high-efficiency N-channel power MOSFET in TO-220F package. This MOSFET has a drain-source withstand voltage of 200V and uses Trench technology, which significantly reduces the on-resistance by creating a trench structure in the semiconductor material, thereby improving switching efficiency and reducing power consumption. Designed for applications with medium voltage and high current requirements, the FQPF5N15-VB has a drain current capability of 20A and an on-resistance of 58mΩ, making it suitable for a variety of high-efficiency electrical circuits.
FQPF5N15-VB is a high-efficiency N-channel power MOSFET in TO-220F package. This MOSFET has a drain-source withstand voltage of 200V and uses Trench technology, which significantly reduces the on-resistance by creating a trench structure in the semiconductor material, thereby improving switching efficiency and reducing power consumption. Designed for applications with medium voltage and high current requirements, the FQPF5N15-VB has a drain current capability of 20A and an on-resistance of 58mΩ, making it suitable for a variety of high-efficiency electrical circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF5N15-VB Detailed parameter description
- **Package type**: TO-220F
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench (trench technology)
- **Package type**: TO-220F
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench (trench technology)
Domain and module applications：
Application fields and module examples
Due to its high current carrying capacity and low on-resistance, FQPF5N15-VB is suitable for the following fields and modules:
1. **Switching power supply**: In switching power supply design, FQPF5N15-VB can efficiently handle current conversion and reduce power consumption. Its low on-resistance (58mΩ) helps improve system efficiency and reduce energy loss, thereby improving the overall performance of the switching power supply.
2. **Motor control**: This MOSFET is suitable for motor drive applications, providing stable and efficient current control. Its high drain current capability of 20A can meet the driving requirements of various motors, making motor control more reliable and efficient.
3. **DC-DC converter**: In DC-DC converters, FQPF5N15-VB can efficiently convert DC voltage to the required output voltage. Its low RDS(ON) characteristics help reduce energy loss during the conversion process and improve the overall efficiency of the converter.
4. **LED driver**: In the LED driver circuit, this MOSFET can effectively control the switching and brightness adjustment of the LED. Its excellent electrical characteristics ensure the stability and efficient operation of the LED lighting system, and is suitable for various LED lighting applications.
With its excellent electrical performance and high efficiency, FQPF5N15-VB is suitable for a variety of medium voltage applications, providing a reliable power switching solution for electronic equipment.
Due to its high current carrying capacity and low on-resistance, FQPF5N15-VB is suitable for the following fields and modules:
1. **Switching power supply**: In switching power supply design, FQPF5N15-VB can efficiently handle current conversion and reduce power consumption. Its low on-resistance (58mΩ) helps improve system efficiency and reduce energy loss, thereby improving the overall performance of the switching power supply.
2. **Motor control**: This MOSFET is suitable for motor drive applications, providing stable and efficient current control. Its high drain current capability of 20A can meet the driving requirements of various motors, making motor control more reliable and efficient.
3. **DC-DC converter**: In DC-DC converters, FQPF5N15-VB can efficiently convert DC voltage to the required output voltage. Its low RDS(ON) characteristics help reduce energy loss during the conversion process and improve the overall efficiency of the converter.
4. **LED driver**: In the LED driver circuit, this MOSFET can effectively control the switching and brightness adjustment of the LED. Its excellent electrical characteristics ensure the stability and efficient operation of the LED lighting system, and is suitable for various LED lighting applications.
With its excellent electrical performance and high efficiency, FQPF5N15-VB is suitable for a variety of medium voltage applications, providing a reliable power switching solution for electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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