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FQPF55N10-VB Product details
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1. FQPF55N10-VB MOSFET Product Introduction
FQPF55N10-VB is a high-performance single N-channel power MOSFET in TO220F package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for medium and high voltage power management and power control applications. Its threshold voltage (Vth) is 2.5V, ensuring effective conduction at a lower gate voltage. The on-resistance (RDS(ON)) of FQPF55N10-VB is 9mΩ@VGS=10V, and it can support a drain current of up to 90A. This low on-resistance and high current handling capability make it excel in applications that require high efficiency and high power density. Using Trench technology, this MOSFET has significant advantages in switching speed and overall energy efficiency.
FQPF55N10-VB is a high-performance single N-channel power MOSFET in TO220F package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for medium and high voltage power management and power control applications. Its threshold voltage (Vth) is 2.5V, ensuring effective conduction at a lower gate voltage. The on-resistance (RDS(ON)) of FQPF55N10-VB is 9mΩ@VGS=10V, and it can support a drain current of up to 90A. This low on-resistance and high current handling capability make it excel in applications that require high efficiency and high power density. Using Trench technology, this MOSFET has significant advantages in switching speed and overall energy efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FQPF55N10-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench technology
- **Power consumption**: 150W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: Fast switching, suitable for high frequency applications
- **Input capacitance (Ciss)**: 3000pF
- **Reverse recovery time (trr)**: 200ns
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench technology
- **Power consumption**: 150W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: Fast switching, suitable for high frequency applications
- **Input capacitance (Ciss)**: 3000pF
- **Reverse recovery time (trr)**: 200ns
Domain and module applications：
3. FQPF55N10-VB MOSFET Applications and Module Examples
1. **High-efficiency Switching Power Supply (SMPS)**: FQPF55N10-VB excels in high-efficiency switching power supplies, and is particularly suitable for applications that require high current and medium-to-high voltage handling. Its low on-resistance and high switching speed enable it to reduce power loss and improve system efficiency, making it suitable for computer power supplies and industrial power supplies.
2. **DC-DC Converter**: In DC-DC converter applications, FQPF55N10-VB is able to efficiently perform voltage conversion, especially in automotive electronics and high-power industrial power supplies. Its high current handling capability and low on-resistance ensure system stability and high efficiency.
3. **Motor Control**: FQPF55N10-VB is suitable for motor control applications such as high-power power tools and electric vehicles. Its high current capability and fast switching characteristics provide stable and efficient motor drive control.
4. **Battery Management System (BMS)**: In battery management systems, especially in electric vehicles and high-power battery pack applications, the FQPF55N10-VB can be used as a protection switch or load switch. Its low on-resistance and high current handling capability improve the efficiency and safety of battery management.
5. **Power Inverter**: The FQPF55N10-VB is suitable for power inverters such as solar inverters and uninterruptible power supply (UPS) systems. Its high efficiency and low power consumption enable it to effectively convert DC to AC, improving the overall performance and reliability of the system.
These application examples demonstrate the wide applicability of the FQPF55N10-VB MOSFET in high voltage, high current and high efficiency applications, making it an ideal choice for power management, motor drive and power conversion.
1. **High-efficiency Switching Power Supply (SMPS)**: FQPF55N10-VB excels in high-efficiency switching power supplies, and is particularly suitable for applications that require high current and medium-to-high voltage handling. Its low on-resistance and high switching speed enable it to reduce power loss and improve system efficiency, making it suitable for computer power supplies and industrial power supplies.
2. **DC-DC Converter**: In DC-DC converter applications, FQPF55N10-VB is able to efficiently perform voltage conversion, especially in automotive electronics and high-power industrial power supplies. Its high current handling capability and low on-resistance ensure system stability and high efficiency.
3. **Motor Control**: FQPF55N10-VB is suitable for motor control applications such as high-power power tools and electric vehicles. Its high current capability and fast switching characteristics provide stable and efficient motor drive control.
4. **Battery Management System (BMS)**: In battery management systems, especially in electric vehicles and high-power battery pack applications, the FQPF55N10-VB can be used as a protection switch or load switch. Its low on-resistance and high current handling capability improve the efficiency and safety of battery management.
5. **Power Inverter**: The FQPF55N10-VB is suitable for power inverters such as solar inverters and uninterruptible power supply (UPS) systems. Its high efficiency and low power consumption enable it to effectively convert DC to AC, improving the overall performance and reliability of the system.
These application examples demonstrate the wide applicability of the FQPF55N10-VB MOSFET in high voltage, high current and high efficiency applications, making it an ideal choice for power management, motor drive and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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