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FQPF4N65-VB Product details
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Product Introduction
The FQPF4N65-VB is a high voltage single N-channel MOSFET in a TO-220F package designed for high voltage applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) tolerance of ±30V, and is capable of handling currents up to 4A. The FQPF4N65-VB uses a planar process and is suitable for applications that require high voltage tolerance but have less stringent requirements for on-resistance. Its higher on-resistance and lower current handling capability make it more suitable for low power and high voltage scenarios.
The FQPF4N65-VB is a high voltage single N-channel MOSFET in a TO-220F package designed for high voltage applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) tolerance of ±30V, and is capable of handling currents up to 4A. The FQPF4N65-VB uses a planar process and is suitable for applications that require high voltage tolerance but have less stringent requirements for on-resistance. Its higher on-resistance and lower current handling capability make it more suitable for low power and high voltage scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS = 10V
- **Drain current (ID)**: 4A
- **Technology type**: Plannar
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS = 10V
- **Drain current (ID)**: 4A
- **Technology type**: Plannar
Domain and module applications：
Applications and modules
1. **High-voltage switching power supply**: The high drain-source voltage capability of the FQPF4N65-VB makes it very suitable for high-voltage switching power supply applications. Despite its high on-resistance, it can still work effectively in high-voltage scenarios that do not require extremely low on-resistance. It can provide stable current control in the switching part of the high-voltage power supply.
2. **Power factor correction (PFC)**: In power factor correction circuits, the high voltage tolerance of this MOSFET is a key advantage. It can stably control current in high-voltage applications, helping to improve the power factor and efficiency of the power supply system.
3. **Lighting control system**: The FQPF4N65-VB is also suitable for some high-voltage lighting control systems, such as switching and adjusting high-voltage lamps. Although its on-resistance is high, it can still meet the needs when controlling low-power high-voltage loads.
4. **Household appliances**: In some household appliances that require high voltage control, such as electric ovens or electric water heaters, the FQPF4N65-VB can be used as a switching element to help manage high voltage current.
Through these application examples, the FQPF4N65-VB demonstrates its suitability in high voltage but low power applications, especially in scenarios where high voltage withstand capability is required but the on-resistance requirement is not extremely low.
1. **High-voltage switching power supply**: The high drain-source voltage capability of the FQPF4N65-VB makes it very suitable for high-voltage switching power supply applications. Despite its high on-resistance, it can still work effectively in high-voltage scenarios that do not require extremely low on-resistance. It can provide stable current control in the switching part of the high-voltage power supply.
2. **Power factor correction (PFC)**: In power factor correction circuits, the high voltage tolerance of this MOSFET is a key advantage. It can stably control current in high-voltage applications, helping to improve the power factor and efficiency of the power supply system.
3. **Lighting control system**: The FQPF4N65-VB is also suitable for some high-voltage lighting control systems, such as switching and adjusting high-voltage lamps. Although its on-resistance is high, it can still meet the needs when controlling low-power high-voltage loads.
4. **Household appliances**: In some household appliances that require high voltage control, such as electric ovens or electric water heaters, the FQPF4N65-VB can be used as a switching element to help manage high voltage current.
Through these application examples, the FQPF4N65-VB demonstrates its suitability in high voltage but low power applications, especially in scenarios where high voltage withstand capability is required but the on-resistance requirement is not extremely low.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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