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FQPF4N65C-VB Product details
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FQPF4N65C-VB MOSFET Product Introduction
FQPF4N65C-VB is a high voltage N-channel power MOSFET in TO220F package. This MOSFET can withstand a drain-source voltage (VDS) of up to 650V and has a gate-source voltage (VGS) range of ±30V. Its turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)@VGS=10V) is 2560mΩ, and the maximum drain current (ID) is 4A. FQPF4N65C-VB adopts planar technology and is designed for switching and power conversion scenarios in high voltage applications. It is particularly suitable for power electronic systems that require high voltage resistance and stable performance.
FQPF4N65C-VB is a high voltage N-channel power MOSFET in TO220F package. This MOSFET can withstand a drain-source voltage (VDS) of up to 650V and has a gate-source voltage (VGS) range of ±30V. Its turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)@VGS=10V) is 2560mΩ, and the maximum drain current (ID) is 4A. FQPF4N65C-VB adopts planar technology and is designed for switching and power conversion scenarios in high voltage applications. It is particularly suitable for power electronic systems that require high voltage resistance and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF4N65C-VB MOSFET Detailed parameter description
1. **Package type**: TO220F
- Provides excellent heat dissipation performance and is suitable for use in high voltage and medium power applications.
2. **Configuration**: Single N-channel
- The single N-channel design is suitable for high voltage applications, providing stable switching control and current handling capabilities.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, making it suitable for high voltage power switching and power management applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports gate drive voltage of ±30V, ensuring stable operation of the device under various voltage conditions.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage is 3.5V, which means that at this gate voltage, the MOSFET starts to conduct.
6. **On-resistance (RDS(ON)@VGS=10V)**: 2560mΩ
- The on-resistance is relatively high, indicating that there will be large conduction losses at high voltages, so good heat dissipation design is required.
7. **Drain current (ID)**: 4A
- The maximum drain current is 4A, which is suitable for medium power application requirements.
8. **Technology type**: Plannar
- Planar technology is suitable for high voltage environments, providing stable switching performance and current handling capabilities. Although the on-resistance is higher, it can work reliably at high voltages.
1. **Package type**: TO220F
- Provides excellent heat dissipation performance and is suitable for use in high voltage and medium power applications.
2. **Configuration**: Single N-channel
- The single N-channel design is suitable for high voltage applications, providing stable switching control and current handling capabilities.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage is 650V, making it suitable for high voltage power switching and power management applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports gate drive voltage of ±30V, ensuring stable operation of the device under various voltage conditions.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage is 3.5V, which means that at this gate voltage, the MOSFET starts to conduct.
6. **On-resistance (RDS(ON)@VGS=10V)**: 2560mΩ
- The on-resistance is relatively high, indicating that there will be large conduction losses at high voltages, so good heat dissipation design is required.
7. **Drain current (ID)**: 4A
- The maximum drain current is 4A, which is suitable for medium power application requirements.
8. **Technology type**: Plannar
- Planar technology is suitable for high voltage environments, providing stable switching performance and current handling capabilities. Although the on-resistance is higher, it can work reliably at high voltages.
Domain and module applications：
FQPF4N65C-VB MOSFET Application Fields and Module Examples
The high voltage tolerance and stable performance of FQPF4N65C-VB MOSFET make it suitable for the following fields and modules:
1. **High Voltage Power Switch**:
- In high voltage power switch applications, this MOSFET can handle high voltages of 650V and is suitable for use as a switching element to ensure efficient and stable operation of the power system.
2. **Power Converter**:
- Suitable for various power conversion modules such as DC-DC converters and AC-DC adapters, which can handle high voltage power conversion requirements and provide reliable switching performance.
3. **High Voltage Inverter**:
- In inverters used in photovoltaic systems or other high voltage inverters, FQPF4N65C-VB MOSFET can achieve high voltage DC to AC conversion to ensure stable system operation.
4. **Power Amplifier**:
- In high voltage power amplifier power management, the FQPF4N65C-VB can be used as a key switching element to handle high voltage and medium current, suitable for applications in RF and communication equipment.
These application examples show the potential of the FQPF4N65C-VB MOSFET in high voltage environments, especially in applications where stable and efficient power conversion and switching performance are required.
The high voltage tolerance and stable performance of FQPF4N65C-VB MOSFET make it suitable for the following fields and modules:
1. **High Voltage Power Switch**:
- In high voltage power switch applications, this MOSFET can handle high voltages of 650V and is suitable for use as a switching element to ensure efficient and stable operation of the power system.
2. **Power Converter**:
- Suitable for various power conversion modules such as DC-DC converters and AC-DC adapters, which can handle high voltage power conversion requirements and provide reliable switching performance.
3. **High Voltage Inverter**:
- In inverters used in photovoltaic systems or other high voltage inverters, FQPF4N65C-VB MOSFET can achieve high voltage DC to AC conversion to ensure stable system operation.
4. **Power Amplifier**:
- In high voltage power amplifier power management, the FQPF4N65C-VB can be used as a key switching element to handle high voltage and medium current, suitable for applications in RF and communication equipment.
These application examples show the potential of the FQPF4N65C-VB MOSFET in high voltage environments, especially in applications where stable and efficient power conversion and switching performance are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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