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FQPF4N25-VB Product details
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FQPF4N25-VB Product Introduction
FQPF4N25-VB is a high-performance N-type MOSFET in TO220F package, designed for medium and high voltage and power applications. This MOSFET adopts Trench technology, providing excellent switching characteristics and low on-resistance, making it suitable for use in a variety of circuits requiring high current and stability. Its moderate drain-source voltage and good current handling capability make it an ideal choice for a variety of power management and switching applications.
FQPF4N25-VB is a high-performance N-type MOSFET in TO220F package, designed for medium and high voltage and power applications. This MOSFET adopts Trench technology, providing excellent switching characteristics and low on-resistance, making it suitable for use in a variety of circuits requiring high current and stability. Its moderate drain-source voltage and good current handling capability make it an ideal choice for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | 1100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3V | 4.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS = 10V
- **Drain current (ID)**: 4.4A
- **Technology**: Trench technology
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1100mΩ @ VGS = 10V
- **Drain current (ID)**: 4.4A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
1. **Switching power supply**: FQPF4N25-VB can provide stable switching control in switching power supply, suitable for high voltage and high current power management applications. Its low on-resistance and good current handling capability enable it to effectively reduce power consumption and improve system efficiency.
2. **DC-DC converter**: In DC-DC converter, this MOSFET can be used for voltage conversion and switching operation. Its high voltage tolerance and low on-resistance ensure high efficiency during the conversion process, suitable for various voltage conversion applications.
3. **Motor driver**: FQPF4N25-VB is also suitable for motor driver to control the start and stop and speed regulation of the motor. Its medium current handling capability and good conduction characteristics enable it to stably drive medium power motors and ensure system reliability.
4. **Power amplifier**: In power amplifier circuit, FQPF4N25-VB can be used for switching operation and signal amplification. Its high voltage withstand capability and stable switching characteristics make it suitable for high voltage signal processing and amplification applications.
5. **Power protection circuit**: This MOSFET can be used in power protection circuits, such as overvoltage protection or overcurrent protection. Its high drain-source voltage and stable performance ensure effective operation in the protection circuit, helping to prevent damage to the power system.
Through the above examples of application areas, it can be seen that the FQPF4N25-VB is important in a variety of applications such as power management, switching power supplies, and power conversion, making it a key component in a variety of electronic designs and systems.
1. **Switching power supply**: FQPF4N25-VB can provide stable switching control in switching power supply, suitable for high voltage and high current power management applications. Its low on-resistance and good current handling capability enable it to effectively reduce power consumption and improve system efficiency.
2. **DC-DC converter**: In DC-DC converter, this MOSFET can be used for voltage conversion and switching operation. Its high voltage tolerance and low on-resistance ensure high efficiency during the conversion process, suitable for various voltage conversion applications.
3. **Motor driver**: FQPF4N25-VB is also suitable for motor driver to control the start and stop and speed regulation of the motor. Its medium current handling capability and good conduction characteristics enable it to stably drive medium power motors and ensure system reliability.
4. **Power amplifier**: In power amplifier circuit, FQPF4N25-VB can be used for switching operation and signal amplification. Its high voltage withstand capability and stable switching characteristics make it suitable for high voltage signal processing and amplification applications.
5. **Power protection circuit**: This MOSFET can be used in power protection circuits, such as overvoltage protection or overcurrent protection. Its high drain-source voltage and stable performance ensure effective operation in the protection circuit, helping to prevent damage to the power system.
Through the above examples of application areas, it can be seen that the FQPF4N25-VB is important in a variety of applications such as power management, switching power supplies, and power conversion, making it a key component in a variety of electronic designs and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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