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FQPF3N90-VB Product details
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FQPF3N90-VB MOSFET Product Introduction
FQPF3N90-VB is a high voltage N-channel power MOSFET in a TO220F package. The device can withstand drain-source voltage (VDS) up to 950V and has a gate-source voltage (VGS) range of ±30V. Its turn-on voltage (Vth) is 3.5V, on-resistance (RDS(ON)@VGS=10V) is 2400mΩ, and maximum drain current (ID) is 6A. FQPF3N90-VB uses Plannar technology and is suitable for switching and power conversion applications that require high voltage tolerance.
FQPF3N90-VB is a high voltage N-channel power MOSFET in a TO220F package. The device can withstand drain-source voltage (VDS) up to 950V and has a gate-source voltage (VGS) range of ±30V. Its turn-on voltage (Vth) is 3.5V, on-resistance (RDS(ON)@VGS=10V) is 2400mΩ, and maximum drain current (ID) is 6A. FQPF3N90-VB uses Plannar technology and is suitable for switching and power conversion applications that require high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | 2400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF3N90-VB MOSFET Detailed parameter description
1. **Package type**: TO220F
- Provides good heat dissipation performance and is suitable for high voltage and medium power applications.
2. **Configuration**: Single N-channel
- The single N-channel design allows switch control at low voltage and is suitable for high voltage scenarios.
3. **Drain-source voltage (VDS)**: 950V
- The maximum drain-source voltage is 950V, suitable for high voltage power supply and power conversion applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports gate drive voltage of ±30V to ensure stable operation of the device under various voltage conditions.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage of MOSFET is 3.5V, which means that the device starts to conduct at this gate voltage.
6. **On-resistance (RDS(ON)@VGS=10V)**: 2400mΩ
- Higher on-resistance means greater conduction loss, so heat dissipation design needs to be considered in the application.
7. **Drain current (ID)**: 6A
- The maximum drain current is 6A, which is suitable for medium power current control requirements.
8. **Technology type**: Plannar
- Planar technology is used in high voltage applications. Although the on-resistance is relatively high, it has good performance and stability at high voltage.
1. **Package type**: TO220F
- Provides good heat dissipation performance and is suitable for high voltage and medium power applications.
2. **Configuration**: Single N-channel
- The single N-channel design allows switch control at low voltage and is suitable for high voltage scenarios.
3. **Drain-source voltage (VDS)**: 950V
- The maximum drain-source voltage is 950V, suitable for high voltage power supply and power conversion applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports gate drive voltage of ±30V to ensure stable operation of the device under various voltage conditions.
5. **Turning point voltage (Vth)**: 3.5V
- The turning point voltage of MOSFET is 3.5V, which means that the device starts to conduct at this gate voltage.
6. **On-resistance (RDS(ON)@VGS=10V)**: 2400mΩ
- Higher on-resistance means greater conduction loss, so heat dissipation design needs to be considered in the application.
7. **Drain current (ID)**: 6A
- The maximum drain current is 6A, which is suitable for medium power current control requirements.
8. **Technology type**: Plannar
- Planar technology is used in high voltage applications. Although the on-resistance is relatively high, it has good performance and stability at high voltage.
Domain and module applications：
FQPF3N90-VB MOSFET Applications and Module Examples
FQPF3N90-VB MOSFET is suitable for the following applications and modules due to its high voltage handling capability and moderate drain current:
1. **High Voltage Switching Power Supply (SMPS)**:
- In high voltage switching power supplies, this MOSFET can be used as a power switching element to handle voltages of 950V, suitable for the stability and efficiency requirements of high voltage power supplies.
2. **High Voltage Inverter**:
- In high voltage inverters, such as those used in photovoltaic systems, this MOSFET can handle the high voltage DC to AC conversion requirements, ensuring efficient and reliable operation of the system.
3. **Power Amplifier**:
- Used in power management of high voltage power amplifiers, it can stably handle high voltages and provide reliable current control, suitable for RF and communication equipment.
4. **Power Electronics**:
- In various high voltage power electronic devices, FQPF3N90-VB MOSFET can be used as a key switching element to handle high voltage and current tasks, providing stable operation and control.
These application examples show the important role of FQPF3N90-VB MOSFET in high voltage environments, especially its potential application in high voltage power supplies and power conversion modules.
FQPF3N90-VB MOSFET is suitable for the following applications and modules due to its high voltage handling capability and moderate drain current:
1. **High Voltage Switching Power Supply (SMPS)**:
- In high voltage switching power supplies, this MOSFET can be used as a power switching element to handle voltages of 950V, suitable for the stability and efficiency requirements of high voltage power supplies.
2. **High Voltage Inverter**:
- In high voltage inverters, such as those used in photovoltaic systems, this MOSFET can handle the high voltage DC to AC conversion requirements, ensuring efficient and reliable operation of the system.
3. **Power Amplifier**:
- Used in power management of high voltage power amplifiers, it can stably handle high voltages and provide reliable current control, suitable for RF and communication equipment.
4. **Power Electronics**:
- In various high voltage power electronic devices, FQPF3N90-VB MOSFET can be used as a key switching element to handle high voltage and current tasks, providing stable operation and control.
These application examples show the important role of FQPF3N90-VB MOSFET in high voltage environments, especially its potential application in high voltage power supplies and power conversion modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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