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FQPF3N40-VB Product details
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FQPF3N40-VB Product Introduction
FQPF3N40-VB is a high voltage N-type MOSFET in TO220F package, designed for high voltage applications. This MOSFET is manufactured using Plannar technology and can provide stable performance in high voltage environments. Its high drain-source voltage and moderate on-resistance make it particularly suitable for high voltage power conversion and switching applications. Although its on-resistance is relatively high, its high voltage withstand capability makes it perform well in applications requiring high voltage operation.
FQPF3N40-VB is a high voltage N-type MOSFET in TO220F package, designed for high voltage applications. This MOSFET is manufactured using Plannar technology and can provide stable performance in high voltage environments. Its high drain-source voltage and moderate on-resistance make it particularly suitable for high voltage power conversion and switching applications. Although its on-resistance is relatively high, its high voltage withstand capability makes it perform well in applications requiring high voltage operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2560mΩ @ VGS = 10V
- **Drain current (ID)**: 4A
- **Technology**: Plannar technology
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2560mΩ @ VGS = 10V
- **Drain current (ID)**: 4A
- **Technology**: Plannar technology
Domain and module applications：
Applications and modules
1. **High-voltage power switch**: The FQPF3N40-VB is suitable for high-voltage power switch applications and is capable of stably switching power under high voltage conditions. Its high drain-source voltage enables it to handle higher voltage power switching tasks and performs well in high-voltage power modules and power management systems.
2. **Power inverter**: In power inverter applications, this MOSFET can be used as a high-voltage switch to help convert DC power to AC power. Its high voltage capability and stable switching characteristics make it suitable for use in inverters to provide reliable power conversion.
3. **Industrial motor drive**: The FQPF3N40-VB can be used to control the start, stop and speed regulation of high-voltage motors in industrial motor drive applications. Although its on-resistance is high, its high voltage withstand capability and large drain current make it suitable for high-voltage motor control.
4. **High-voltage amplifier**: In high-voltage amplifier circuits, this MOSFET can be used for switching operations for signal amplification. Its high drain-source voltage and stability enable it to maintain reliable performance in high voltage signal processing and amplification applications.
5. **Power Converters**: FQPF3N40-VB is also suitable for use in power converters, especially in applications that handle high voltages. Although its on-resistance is higher, its high voltage capability enables it to provide stable switching performance in power converters that require high voltage operation.
Through the examples of the above application areas, it can be seen that the importance of FQPF3N40-VB in high voltage and power applications is suitable for a variety of electronic designs and systems that require high voltage processing.
1. **High-voltage power switch**: The FQPF3N40-VB is suitable for high-voltage power switch applications and is capable of stably switching power under high voltage conditions. Its high drain-source voltage enables it to handle higher voltage power switching tasks and performs well in high-voltage power modules and power management systems.
2. **Power inverter**: In power inverter applications, this MOSFET can be used as a high-voltage switch to help convert DC power to AC power. Its high voltage capability and stable switching characteristics make it suitable for use in inverters to provide reliable power conversion.
3. **Industrial motor drive**: The FQPF3N40-VB can be used to control the start, stop and speed regulation of high-voltage motors in industrial motor drive applications. Although its on-resistance is high, its high voltage withstand capability and large drain current make it suitable for high-voltage motor control.
4. **High-voltage amplifier**: In high-voltage amplifier circuits, this MOSFET can be used for switching operations for signal amplification. Its high drain-source voltage and stability enable it to maintain reliable performance in high voltage signal processing and amplification applications.
5. **Power Converters**: FQPF3N40-VB is also suitable for use in power converters, especially in applications that handle high voltages. Although its on-resistance is higher, its high voltage capability enables it to provide stable switching performance in power converters that require high voltage operation.
Through the examples of the above application areas, it can be seen that the importance of FQPF3N40-VB in high voltage and power applications is suitable for a variety of electronic designs and systems that require high voltage processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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