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FQPF3N30-VB Product details
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Product Introduction: FQPF3N30-VB
FQPF3N30-VB is a single-channel N-type MOSFET packaged in TO220F. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and its turn-on voltage (Vth) is 3.5V. It is manufactured using planar technology, with an on-resistance (RDS(ON)) of 2560mΩ at VGS=10V and a maximum drain current (ID) of 4A. FQPF3N30-VB is suitable for high-voltage applications, especially for circuits that need to handle relatively low currents.
FQPF3N30-VB is a single-channel N-type MOSFET packaged in TO220F. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and its turn-on voltage (Vth) is 3.5V. It is manufactured using planar technology, with an on-resistance (RDS(ON)) of 2560mΩ at VGS=10V and a maximum drain current (ID) of 4A. FQPF3N30-VB is suitable for high-voltage applications, especially for circuits that need to handle relatively low currents.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package type**: TO220F
- **Polarity configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology type**: Plannar
- **Package shape**: TO220F package, provides better heat dissipation capability, suitable for high-power applications.
- **Package type**: TO220F
- **Polarity configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology type**: Plannar
- **Package shape**: TO220F package, provides better heat dissipation capability, suitable for high-power applications.
Domain and module applications：
Application fields and module examples:
1. **High-voltage switch-mode power supply (SMPS)**: FQPF3N30-VB is suitable for switching elements in high-voltage switch-mode power supplies, especially for applications with low current requirements. Its 650V withstand voltage capability enables it to handle high voltage inputs, while its moderate on-resistance can meet the needs of general high-voltage switch-mode power supplies.
2. **Small power tools**: In some small power tools, FQPF3N30-VB can be used as a switching element. Although its maximum drain current is 4A, it is suitable for occasions where the current requirements are not particularly high, and it can operate stably in a high voltage environment.
3. **Industrial control circuits**: FQPF3N30-VB can provide stable switching operations in industrial control circuits, such as high-voltage control modules. Its high voltage withstand capability and low current handling capability make it suitable for industrial control applications that require high voltage switching.
4. **Power Protection**: This MOSFET can also be used in power protection circuits, such as overvoltage protection or current limiting circuits. Its high withstand voltage characteristics ensure that it can switch reliably in high voltage situations, protecting the power supply and other circuit components from damage.
1. **High-voltage switch-mode power supply (SMPS)**: FQPF3N30-VB is suitable for switching elements in high-voltage switch-mode power supplies, especially for applications with low current requirements. Its 650V withstand voltage capability enables it to handle high voltage inputs, while its moderate on-resistance can meet the needs of general high-voltage switch-mode power supplies.
2. **Small power tools**: In some small power tools, FQPF3N30-VB can be used as a switching element. Although its maximum drain current is 4A, it is suitable for occasions where the current requirements are not particularly high, and it can operate stably in a high voltage environment.
3. **Industrial control circuits**: FQPF3N30-VB can provide stable switching operations in industrial control circuits, such as high-voltage control modules. Its high voltage withstand capability and low current handling capability make it suitable for industrial control applications that require high voltage switching.
4. **Power Protection**: This MOSFET can also be used in power protection circuits, such as overvoltage protection or current limiting circuits. Its high withstand voltage characteristics ensure that it can switch reliably in high voltage situations, protecting the power supply and other circuit components from damage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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