FQPF34N20-VB Product details
Product introduction:
FQPF34N20-VB is a high-performance N-channel power MOSFET in a TO-220F package. This MOSFET has a drain-source withstand voltage of 200V and is suitable for medium voltage applications. It uses Trench technology, which significantly reduces the on-resistance by creating a trench structure in the semiconductor material, thereby improving switching efficiency and reducing power consumption. The FQPF34N20-VB is designed to provide high current carrying capability and excellent switching performance, and is suitable for electronic circuits that require high efficiency and high reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO-220F
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench (trench technology)
Domain and module applications:
The design features of FQPF34N20-VB make it very suitable for the following applications:
1. **Switching power supply**: In the switching power supply system, FQPF34N20-VB can efficiently handle the conversion and regulation of current. Its low RDS(ON) characteristic reduces power loss, improves the energy efficiency of the system, and makes the switching power supply operation more stable and efficient.
2. **Motor control**: This MOSFET can be used in motor drive circuits to provide stable current control. Its high current carrying capacity (20A) enables it to effectively drive a variety of industrial motors and electric motors, suitable for high-power motor control applications.
3. **DC-DC converter**: In the DC-DC converter, FQPF34N20-VB can efficiently convert DC voltage. Its low on-resistance helps improve the overall performance of the converter, reduce energy loss, and thus improve conversion efficiency.
4. **LED driver**: In the LED driver circuit, this MOSFET can efficiently control the switching and brightness adjustment of the LED. Its excellent electrical characteristics ensure the stability and efficient operation of the LED lighting system and extend the service life of the LED.
With its high current handling capability and low power consumption characteristics, the FQPF34N20-VB performs well in a variety of medium voltage applications and is an ideal choice for high-performance electronic circuits.
Technical support:
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