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FQPF33N10-VB Product details
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1. FQPF33N10-VB MOSFET Product Introduction
FQPF33N10-VB is a single N-channel power MOSFET in a TO220F package, designed for high-efficiency medium and low voltage applications. With a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, the device is well suited for a wide range of applications such as power management and switching circuits. Its threshold voltage (Vth) is 1.8V, enabling it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of the FQPF33N10-VB is only 34mΩ@VGS=10V, and it supports a drain current of up to 50A, ensuring excellent performance in high current applications. With Trench technology, this MOSFET excels in switching speed and energy efficiency, making it an ideal choice for efficient power conversion and power control.
FQPF33N10-VB is a single N-channel power MOSFET in a TO220F package, designed for high-efficiency medium and low voltage applications. With a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, the device is well suited for a wide range of applications such as power management and switching circuits. Its threshold voltage (Vth) is 1.8V, enabling it to turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of the FQPF33N10-VB is only 34mΩ@VGS=10V, and it supports a drain current of up to 50A, ensuring excellent performance in high current applications. With Trench technology, this MOSFET excels in switching speed and energy efficiency, making it an ideal choice for efficient power conversion and power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FQPF33N10-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology
- **Power consumption**: 130W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: Fast switching, suitable for high frequency applications
- **Input capacitance (Ciss)**: 2500pF
- **Reverse recovery time (trr)**: 180ns
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology
- **Power consumption**: 130W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: Fast switching, suitable for high frequency applications
- **Input capacitance (Ciss)**: 2500pF
- **Reverse recovery time (trr)**: 180ns
Domain and module applications：
3. FQPF33N10-VB MOSFET Applications and Module Examples
1. **Switching Power Supply (SMPS)**: FQPF33N10-VB excels in switching power supplies, especially in those applications that require high current and low to medium voltage handling. Its low on-resistance and high switching speed reduce power losses and improve system efficiency.
2. **DC-DC Converter**: This MOSFET is suitable for DC-DC converters, especially in automotive electronics and industrial power supplies. Its high current handling capability and low on-resistance enable it to effectively manage power conversion and ensure output stability.
3. **Motor Control**: FQPF33N10-VB also excels in motor control applications and is suitable for motor drive systems that require fast response and high efficiency. It can be used as a main switch to provide stable power control and high reliability.
4. **Battery Management System (BMS)**: In medium and low voltage battery management systems, FQPF33N10-VB can be used to control and protect battery packs. It is particularly suitable for applications in power tools and small electric equipment to provide efficient power management and protection.
5. **Power Inverter**: This MOSFET is suitable for applications such as solar inverters and uninterruptible power supplies (UPS) to convert DC power to AC power. Its high efficiency and low conduction loss enable it to effectively improve system performance in these applications.
These application examples demonstrate the wide applicability of FQPF33N10-VB MOSFET in various fields of high efficiency, medium and low voltage, and high current processing, making it an ideal choice for power management and power conversion applications.
1. **Switching Power Supply (SMPS)**: FQPF33N10-VB excels in switching power supplies, especially in those applications that require high current and low to medium voltage handling. Its low on-resistance and high switching speed reduce power losses and improve system efficiency.
2. **DC-DC Converter**: This MOSFET is suitable for DC-DC converters, especially in automotive electronics and industrial power supplies. Its high current handling capability and low on-resistance enable it to effectively manage power conversion and ensure output stability.
3. **Motor Control**: FQPF33N10-VB also excels in motor control applications and is suitable for motor drive systems that require fast response and high efficiency. It can be used as a main switch to provide stable power control and high reliability.
4. **Battery Management System (BMS)**: In medium and low voltage battery management systems, FQPF33N10-VB can be used to control and protect battery packs. It is particularly suitable for applications in power tools and small electric equipment to provide efficient power management and protection.
5. **Power Inverter**: This MOSFET is suitable for applications such as solar inverters and uninterruptible power supplies (UPS) to convert DC power to AC power. Its high efficiency and low conduction loss enable it to effectively improve system performance in these applications.
These application examples demonstrate the wide applicability of FQPF33N10-VB MOSFET in various fields of high efficiency, medium and low voltage, and high current processing, making it an ideal choice for power management and power conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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