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FQPF33N10L-VB Product details
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FQPF33N10L-VB MOSFET: Product Overview
The FQPF33N10L-VB is a high-performance N-channel MOSFET in a TO220F package designed to handle medium and high voltage, high current applications. It has a maximum drain-source voltage (VDS) of 100V, an on-resistance (RDS(ON)) of 34mΩ @ VGS = 10V, and can withstand up to 50A of continuous drain current. Utilizing Trench technology, this MOSFET provides low conduction losses and efficient switching performance, making it ideal for high power electronic devices and power management systems.
The FQPF33N10L-VB is a high-performance N-channel MOSFET in a TO220F package designed to handle medium and high voltage, high current applications. It has a maximum drain-source voltage (VDS) of 100V, an on-resistance (RDS(ON)) of 34mΩ @ VGS = 10V, and can withstand up to 50A of continuous drain current. Utilizing Trench technology, this MOSFET provides low conduction losses and efficient switching performance, making it ideal for high power electronic devices and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package:** TO220F
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 1.8V
- **RDS(ON) (on-resistance):** 34mΩ @ VGS = 10V
- **ID (continuous drain current):** 50A
- **Technology:** Trench
- **Package:** TO220F
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 1.8V
- **RDS(ON) (on-resistance):** 34mΩ @ VGS = 10V
- **ID (continuous drain current):** 50A
- **Technology:** Trench
Domain and module applications：
Application Examples
FQPF33N10L-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some practical application scenarios:
1. **Power Management System:** FQPF33N10L-VB is suitable for power management systems such as switch mode power supply (SMPS) and DC-DC converter (DC-DC Converter). These applications usually require higher current processing and require low on-resistance to improve energy efficiency.
2. **Motor Drive:** In motor drive applications, this MOSFET can be used in H-bridge circuits and motor controllers to provide efficient current switching and control for high-power motors, suitable for electric vehicles and industrial motor control systems.
3. **Battery Management System:** Due to its high current carrying capacity and low conduction loss, FQPF33N10L-VB is very suitable for battery management systems, especially in battery chargers and battery protection circuits, to ensure efficient charging and discharging and reliable operation of batteries.
4. **High Power Load Switch:** This MOSFET can be used as a high power load switch and is suitable for high current switching applications that require fast response and low power consumption, such as modules such as power switches and load controllers.
FQPF33N10L-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some practical application scenarios:
1. **Power Management System:** FQPF33N10L-VB is suitable for power management systems such as switch mode power supply (SMPS) and DC-DC converter (DC-DC Converter). These applications usually require higher current processing and require low on-resistance to improve energy efficiency.
2. **Motor Drive:** In motor drive applications, this MOSFET can be used in H-bridge circuits and motor controllers to provide efficient current switching and control for high-power motors, suitable for electric vehicles and industrial motor control systems.
3. **Battery Management System:** Due to its high current carrying capacity and low conduction loss, FQPF33N10L-VB is very suitable for battery management systems, especially in battery chargers and battery protection circuits, to ensure efficient charging and discharging and reliable operation of batteries.
4. **High Power Load Switch:** This MOSFET can be used as a high power load switch and is suitable for high current switching applications that require fast response and low power consumption, such as modules such as power switches and load controllers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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