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FQPF2N60C-VB Product details
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FQPF2N60C-VB Product Introduction
FQPF2N60C-VB is a high voltage N-type MOSFET in TO220F package, designed for applications requiring high withstand voltage and low power consumption. This MOSFET adopts Plannar technology and has excellent switching characteristics and stability, especially suitable for high voltage circuits and power conversion applications. Its high drain-source voltage and moderate on-resistance enable it to provide reliable performance in a variety of applications requiring high voltage operation.
FQPF2N60C-VB is a high voltage N-type MOSFET in TO220F package, designed for applications requiring high withstand voltage and low power consumption. This MOSFET adopts Plannar technology and has excellent switching characteristics and stability, especially suitable for high voltage circuits and power conversion applications. Its high drain-source voltage and moderate on-resistance enable it to provide reliable performance in a variety of applications requiring high voltage operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1700mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar technology
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1700mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar technology
Domain and module applications：
Applications and Modules
1. **Power Converter**: The FQPF2N60C-VB is suitable for power converters and high voltage DC-DC converters, and can work stably in high voltage environments. Its high drain-source voltage and low on-resistance characteristics make it suitable for power conversion tasks that handle high voltages.
2. **Switching Power Supply**: In switching power supplies, this MOSFET can effectively manage high voltage switching operations. Its high voltage tolerance and stability ensure reliability and efficiency during power switching, and is suitable for various power management applications.
3. **Motor Control System**: The FQPF2N60C-VB can be used for high voltage switching in motor control systems, especially in industrial motors and high-power motors that require high voltage control. Its high voltage capability and good switching characteristics enable it to provide reliable performance in motor drive circuits.
4. **Inverter**: In inverter applications, this MOSFET can be used as a high voltage switch to convert DC power to AC power. Its high drain-source voltage and ruggedness make it suitable for switch control in high-voltage inverters.
5. **High-voltage power supply system**: FQPF2N60C-VB is suitable for use in high-voltage power supply systems, such as high-voltage power modules and power amplifiers, and can operate stably and provide efficient energy conversion in high-voltage environments.
Through the above application examples, FQPF2N60C-VB shows its importance in high-voltage and high-power environments, and is suitable for various electronic designs and systems that require stable high-voltage operation.
1. **Power Converter**: The FQPF2N60C-VB is suitable for power converters and high voltage DC-DC converters, and can work stably in high voltage environments. Its high drain-source voltage and low on-resistance characteristics make it suitable for power conversion tasks that handle high voltages.
2. **Switching Power Supply**: In switching power supplies, this MOSFET can effectively manage high voltage switching operations. Its high voltage tolerance and stability ensure reliability and efficiency during power switching, and is suitable for various power management applications.
3. **Motor Control System**: The FQPF2N60C-VB can be used for high voltage switching in motor control systems, especially in industrial motors and high-power motors that require high voltage control. Its high voltage capability and good switching characteristics enable it to provide reliable performance in motor drive circuits.
4. **Inverter**: In inverter applications, this MOSFET can be used as a high voltage switch to convert DC power to AC power. Its high drain-source voltage and ruggedness make it suitable for switch control in high-voltage inverters.
5. **High-voltage power supply system**: FQPF2N60C-VB is suitable for use in high-voltage power supply systems, such as high-voltage power modules and power amplifiers, and can operate stably and provide efficient energy conversion in high-voltage environments.
Through the above application examples, FQPF2N60C-VB shows its importance in high-voltage and high-power environments, and is suitable for various electronic designs and systems that require stable high-voltage operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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