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FQPF27N25-VB Product details

Product introduction:

1. FQPF27N25-VB MOSFET Product Introduction

FQPF27N25-VB is a single N-channel power MOSFET in a TO220F package, designed for high-efficiency and high-reliability medium and high-voltage applications. With a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V, the device is suitable for a wide range of power management and power control applications. Its threshold voltage (Vth) is 3.5V, ensuring effective conduction even at lower gate-source voltages. The on-resistance (RDS(ON)) of FQPF27N25-VB is 40mΩ@VGS=10V, and it can support drain currents up to 40A, making it ideal for applications that require high current handling capabilities. Using Trench technology, this MOSFET excels in switching speed and energy efficiency, making it ideal for high-efficiency power conversion and power conditioning applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 250V 3.5V 40A 40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 250V 3.5V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 250V 3.5V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. FQPF27N25-VB MOSFET Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench technology
- **Power consumption**: 110W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: Suitable for high frequency applications, with fast switching characteristics
- **Input capacitance (Ciss)**: 2000pF
- **Reverse recovery time (trr)**: 250ns

Domain and module applications:

3. FQPF27N25-VB MOSFET Applications and Module Examples

1. **Switching Power Supply (SMPS)**: FQPF27N25-VB is particularly suitable for switching power supply design, especially those applications that need to handle higher currents and voltages. Its low on-resistance and high switching speed can effectively reduce energy losses and improve overall system efficiency.

2. **DC-DC Converter**: This MOSFET is very suitable for use in DC-DC converters, especially medium and high power buck or boost converters. Its high current handling capability ensures stability and efficiency during high power conversion.

3. **Motor Drive**: In motor drive applications, FQPF27N25-VB can be used as a control switch, suitable for driving high power motors, providing good switching performance and high reliability.

4. **Battery Management System (BMS)**: In high-voltage battery management systems, this MOSFET can be used as a protection switch or load switch, suitable for providing efficient power regulation and protection in electric vehicles and power storage systems.

5. **Power Inverter**: FQPF27N25-VB performs well in power inverter applications, and can efficiently convert DC power to AC power in solar inverters and UPS systems to ensure system stability and high efficiency.

These application examples demonstrate the wide applicability of FQPF27N25-VB MOSFET in different fields with high power and high current handling requirements, making it an ideal choice for power management and power conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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