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FQPF22P10-VB Product details
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FQPF22P10-VB MOSFET: Product Overview
The FQPF22P10-VB is a high-performance P-channel MOSFET in a TO220F package designed for high-voltage power management and switching applications. Its maximum drain-source voltage (VDS) is -100V, making it suitable for circuits that need to handle negative voltages. The MOSFET has an on-resistance (RDS(ON)) of 120mΩ at VGS = 4.5V and 100mΩ at VGS = 10V, providing excellent switching performance and low power consumption. The device uses Trench technology for high efficiency and reliability.
The FQPF22P10-VB is a high-performance P-channel MOSFET in a TO220F package designed for high-voltage power management and switching applications. Its maximum drain-source voltage (VDS) is -100V, making it suitable for circuits that need to handle negative voltages. The MOSFET has an on-resistance (RDS(ON)) of 120mΩ at VGS = 4.5V and 100mΩ at VGS = 10V, providing excellent switching performance and low power consumption. The device uses Trench technology for high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -23A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -23A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -23A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
- **Package:** TO220F
- **Configuration:** Single P-channel
- **VDS (drain-source voltage):** -100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -2V
- **RDS(ON) (on-resistance):**
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **ID (continuous drain current):** -23A
- **Technology:** Trench
- **Package:** TO220F
- **Configuration:** Single P-channel
- **VDS (drain-source voltage):** -100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -2V
- **RDS(ON) (on-resistance):**
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **ID (continuous drain current):** -23A
- **Technology:** Trench
Domain and module applications：
Application Examples
FQPF22P10-VB MOSFET is widely used in the following fields and modules:
1. **High-voltage power management:** This MOSFET is ideal for high-voltage power management systems, such as switch mode power supplies (SMPS) and DC-DC converters. Its high withstand voltage and low on-resistance enable efficient switching and control under negative voltage conditions.
2. **Motor drive:** In motor drive applications, FQPF22P10-VB can be used in H-bridge circuits and motor controllers to provide efficient switching operations for motors, and is suitable for negative voltage motor drive systems.
3. **Load switch:** This MOSFET can be used as a load switch, providing stable performance and low power consumption in applications that require high current and negative voltage, such as battery management systems and high-power load control circuits.
4. **Inverter:** In inverter systems, the FQPF22P10-VB MOSFET can be used as a switching element to handle negative voltage and achieve efficient power conversion, suitable for equipment such as solar inverters and uninterruptible power supplies (UPS).
FQPF22P10-VB MOSFET is widely used in the following fields and modules:
1. **High-voltage power management:** This MOSFET is ideal for high-voltage power management systems, such as switch mode power supplies (SMPS) and DC-DC converters. Its high withstand voltage and low on-resistance enable efficient switching and control under negative voltage conditions.
2. **Motor drive:** In motor drive applications, FQPF22P10-VB can be used in H-bridge circuits and motor controllers to provide efficient switching operations for motors, and is suitable for negative voltage motor drive systems.
3. **Load switch:** This MOSFET can be used as a load switch, providing stable performance and low power consumption in applications that require high current and negative voltage, such as battery management systems and high-power load control circuits.
4. **Inverter:** In inverter systems, the FQPF22P10-VB MOSFET can be used as a switching element to handle negative voltage and achieve efficient power conversion, suitable for equipment such as solar inverters and uninterruptible power supplies (UPS).
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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